Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 6375-6381
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hall measurements were conducted at temperatures up to 1000 K on unintentionally doped n-type β(3C)- and α(6H)-SiC thin films epitaxially grown on both on-axis and vicinal Si (100) and α(6H)-SiC (0001) by chemical vapor deposition. The carrier concentration versus temperature data were analyzed using a compensation model. The β-SiC films grown on Si were highly compensated (NA/ND=0.73–0.98). The compensation ratio was not as large in the SiC films grown on α-SiC (NA/ND=0.36, for β-SiC on α-SiC, and 0.02, for α-SiC on α-SiC). The donor ionization energy for β-SiC on Si was calculated to be 14–21 meV. Analogous values for β- and α-SiC films on α-SiC were 33 and 84 meV, respectively. These values are smaller than those for N determined from photoluminescence studies.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345159
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