Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 3246-3250
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
An attempt is made to study the interband tunneling rate for small-gap semiconductors having Kane-type energy bands in the presence of an external electric field, taking InSb as an example for the purpose of numerical computations. The experimentally obtained tunneling currents, which may not be limited by the factor 2, can be better explained by this formulation. Thus, the present analysis is applicable for wider ranger of electric fields and are more consistent with the experimental results than that previously proposed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.354599
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