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Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes (1995)

Shen, Jun

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 6220-6223

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Several possible contributions to the valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes are analyzed. A theoretical model proposes that the field-assisted thermionic hole emission is the main valley leakage mechanism at high temperature and the Fowler–Nordheim hole tunneling is the dominant leakage path at low temperature and high bias. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360568

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