Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 168-169
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Hole-trap states in the gate oxide of a Si metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated by inhomogeneous excimer laser irradiation. Subbandgap ultraviolet light photons with an energy exceeding a threshold lying between 5.5 and 6.4 eV were found to excite electrons from these originally neutral states into the SiO2 conduction band. A fixed positive charge is left behind. The degradation in MOSFET performance due to the irradiation is comparable to that accompanying hot-hole injection. Also, subsequent hot-electron stress changes the device characteristics in a way similar to hot-electron stress following hot-hole stress. It is concluded that the traps responsible for hot-carrier degradation cause the optically induced charge trapping.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.101218
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