Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 388-390
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We propose and demonstrate an all-epitaxial semiconductor/semimetal Schottky (S3) photodiode based on an n-type Hg0.56Cd0.46 Te/HgTe isotype heterojunction. The structure, grown using molecular beam epitaxy, was fabricated into back-illuminated mesa diodes. A 40-μm-diam photodiode shows room-temperature rectification and high efficiency photoresponse, with a long-wavelength cutoff of 2.43 μm and a peak quantum efficiency of 44% at 2.0 μm for 250 mV of reverse bias. The dark current at this bias is 100 μA.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.102794
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