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Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers (1991)

Ozeki, Y. ; Johnson, John E. ; Tang, C. L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1958-1960

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Because the confinement of carriers in a quantum well constraints the crystal momentum of the carriers near the band edge to directions close to the well normal, the selection rules for conduction to heavy-hole transitions yield a large anisotropy in the absorption cross section. We predict a new type of room-temperature polarization bistability based upon this effect in a semiconductor laser with an intracavity multiple quantum well saturable absorber. Rate equation analyses of the static device characteristics as a function of various parameters are presented, and show that two-mode bistable behavior with large hysteresis is possible over a broad range of conditions. Other modes of operation, including all-optical switching and tristable operation, have been verified by numerical calculation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105031

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