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All a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y Josephson devices operating at 80 K (1991)

Barner, J. B. ; Rogers, C. T. ; Inam, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 742-744

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have demonstrated the controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O7−y-PrBa2Cu3O7−z-YBa2Cu3O7−y trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O7−z barrier layer. Critical current densities in excess of 104 A/cm2 have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105330

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