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Observation of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown on V-grooved (001) Si and planar (111) Si substrates (1993)

Howard, David J. ; Bailey, William E. ; Paine, David C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 2893-2895

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A new strain relief mechanism was observed in lattice mismatched epitaxial layers grown on (111) surfaces. Thin films of Si0.85Ge0.15 were epitaxilly grown by rapid thermal chemical vapor deposition on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes. Cross-section and plan-view transmission electron microscopy studies revealed the presence of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown both on (111) Si wafers and the {111} side walls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on nonplanar substrates.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110317

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