Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1261-1263
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
This letter describes the formation of nanometer-scale features in a silicon substrate using a self-assembled monolayer (SAM) of octylsiloxane on silicon dioxide as a resist sensitive to a patterned beam of neutral cesium atoms. The mask that patterned the atomic beam was a silicon nitride membrane perforated with nm and μm scale holes, in contact with the substrate surface. In a two-step wet-chemical etching process, the pattern formed in the SAM was transferred first into the SiO2 layer and then into an underlying silicon substrate. This process demonstrated the formation of silicon features with diameter ∼60 nm. © 1997 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.119867
|
Standort |
Signatur |
Erwartet |
Verfügbarkeit |
