Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 631-633
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed. © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.125841
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