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Zinc oxide doping effects in polarization switching of lithium niobate (2001)

Peng, L.-H. ; Zhang, Y.-C. ; Lin, Y.-C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 4-6

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report a pulsed-field analysis on the 180° domain reversal process in Z-cut congruent grown lithium niobate (LiNbO3) doped with zinc oxide at concentration CZnO〉5 mol %. The polarization switching field is found to decrease with the ZnO doping with a threshold (Eth) and internal (Eint) field as low as 2.5 and 0.5 kV/mm, respectively, resultant on 8 mol % ZnO doped LiNbO3. The substantial decrease of Eth and Eint is ascribed to the suppression of nonstoichiometric point defects by the substitution of Zn2+ ions in the lattice site. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1336815

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