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Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors (2001)

Hu, X. ; Koudymov, A. ; Simin, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 2832-2834

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1412591

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