Publication Date:
2007-03-24
Description:
When tin (Sn) atoms are deposited on a clean germanium (Ge) (001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge-dimer position. We identified the dimer as a heterogeneous Sn-Ge dimer by reversing its buckling orientation with a scanning tunneling microscope (STM) at 80 kelvin. An atomic seesaw switch was formed for one-dimensional electronic conduction in the Ge dimer-row direction by using the STM to reversibly flip the buckling orientation of the Sn-Ge dimer and to set up standing-wave states.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Tomatsu, K -- Nakatsuji, K -- Iimori, T -- Takagi, Y -- Kusuhara, H -- Ishii, A -- Komori, F -- New York, N.Y. -- Science. 2007 Mar 23;315(5819):1696-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17379803" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
,
Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
