ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layers were successfully constructed on Si(100)substrates through the chemical solution deposition. The degree of c-axis orientation andmicrostructure of Y0.5Yb0.5MnO3 ferroelectrics was improved by the control of concentration ofprecursor solutions. Capacitance of Pt/Y0.5Yb0.5MnO3/HfO2/Si structure was almost constant over104 s on the retention property
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.350.107.pdf