Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 1542-1544
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High sensitivity, high-energy resolution, and the capability to obtain data in situ make ellipsometry a useful tool for addressing a number of problems in thin-film deposition processes. Dielectric functions ε˜=ε1−i ε2 of glow-discharge-produced microcrystalline silicon films (μc-Si) are determined by using spectroscopic ellipsometry (SE). ε2 spectra present a shoulder near 4.2 eV which corresponds to the E2 optical transition observed in crystalline silicon. This peak is not observed in amorphous silicon spectra. c-Si is described as a mixture of amorphous phase, microcrystallites, and voids. The choice of the microcrystalline reference phase is discussed in particular by comparing the microcrystallite volume fraction determined from SE and x-ray measurements. Strong variations in the nature of the material are observed during growth: the density deficiency and the surface roughness both increase as functions of film thickness up to 0.4–0.5 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337289
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