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  • 1
    Digitale Medien
    Digitale Medien
    Smectic layer orientation during switching of surface stabilized cells filled with fluorinated ferroelectric liquid crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 664-669 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray diffraction study of smectic-C* layer orientation in surface stabilized cells filled with fluorinated ferroelectric liquid crystals show chevron layer structure. The chevrons remain unperturbed up to a field of 12.5 × 106 V/m while optical observations suggest uniform switching at low fields, and nucleation and growth mediated switching at high-field strengths.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351352
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  • 2
    Digitale Medien
    Digitale Medien
    MeV He+ ion induced delamination of diamond films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report room temperature delamination of chemically vapor deposited diamond films on a Si substrate due to 1.5 MeV He+ ion bombardment. The delamination of films has been studied by scanning electron microscopy. The threshold fluence at which the delamination takes place has been determined in situ by monitoring the hydrogen signal with the help of elastic recoil detection analysis. Micro Raman measurements show the presence of residual stress (1.19 GPa) in the as-prepared films and its relaxation at the peripheri of the delaminated regions. It is proposed that enhancement of the residual stress during He+ ion bombardment leads to stress saturation conditions which result in the delamination of the brittle diamond films from the film/substrate interface. These findings lead to the possibility of creating ion-beam induced channels in diamond films for device isolation by suitable choice of film/substrate combination. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121525
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  • 3
    Digitale Medien
    Digitale Medien
    In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2088-2090 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe measurements. It is shown that the correlation between both in situ techniques allows a detailed description of the optoelectronic behavior of these interfaces. The Schottky barrier at the TCO/a/Si:H interfaces, as revealed by Kelvin probe measurements, is correlated with the chemical reduction of the TCO surface during the early stage of a:Si:H growth, as evidenced by kinetic ellipsometry. In particular, indium tin oxide (ITO) and SnO2 are found to be reduced by the silane plasma at 250 °C. On the countrary, ZnO is found highly resistant upon plasma reduction. The influence of the substrate temperature during a-Si:H deposition is analyzed. Finally, the technical consequences of this study are outlined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101511
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  • 4
    Digitale Medien
    Digitale Medien
    A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3023-3034 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In situ fast kinetic ellipsometry is used to investigate the early stage of the growth of hydrogenated amorphous silicon (a-Si:H) on tin-doped indium oxide (ITO), tin oxide (TO), and zinc oxide substrates. Transparent conducting oxide (TCO) substrates obtained from various sources and deposited by different techniques are studied. A wide range of deposition parameters of a-Si:H films is considered. For a comparison with growth of amorphous silicon from silane, the ellipsometry data on pure hydrogen plasma degradation of TCO surfaces are also presented. In case of ITO and TO films, a two-step deposition is observed: the first step is dominated by the reduction of TCO and formation of metallic In or Sn (≈10 s time scale) and the second step is the subsequent growth of a-Si:H on the reduced substrates. In contrast, ZnO does not show any reduction. The substrate temperature during a-Si:H deposition is found to have the most important influence on the chemical reduction of the substrates. Variations of other deposition parameters like rf power, total gas pressure, ion bombardment, and p- or n-type doping do not lead to a reduction-free deposition on ITO and TO films. The substrate surface roughness plays an important role during the long-term growth of a-Si:H. In particular, a memory of surface roughness of the TCO substrates is retained in the growing a-Si:H films. The technological consequences of this study are outlined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342694
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  • 5
    Digitale Medien
    Digitale Medien
    A spectroscopic ellipsometry study of the growth and microstructure of glow-discharge amorphous and microcrystalline silicon films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1497-1503 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Spectroscopic ellipsometry (SE) has been used to study the surface, microstructure, and optical properties of glow-discharge deposited amorphous and microcrystalline silicon films. The SE data has been analyzed using multilayer models, effective medium approximation, and linear regression analysis. The studies have shown that with increasing rf power and silane dilution, a gradual transition from good (dense) a-Si:H to a spongy material with a large density deficit, and then to a microcrystalline material is obtained. A quantitative analysis of the microstructure of a-Si:H films with growth parameters has been carried out. Combined with infrared and x-ray diffraction measurements, the results have been explained in terms of a nucleation and growth model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339932
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  • 6
    Digitale Medien
    Digitale Medien
    In situ spectroscopic ellipsometry study of the growth of microcrystalline silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1542-1544 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High sensitivity, high-energy resolution, and the capability to obtain data in situ make ellipsometry a useful tool for addressing a number of problems in thin-film deposition processes. Dielectric functions ε˜=ε1−i ε2 of glow-discharge-produced microcrystalline silicon films (μc-Si) are determined by using spectroscopic ellipsometry (SE). ε2 spectra present a shoulder near 4.2 eV which corresponds to the E2 optical transition observed in crystalline silicon. This peak is not observed in amorphous silicon spectra. c-Si is described as a mixture of amorphous phase, microcrystallites, and voids. The choice of the microcrystalline reference phase is discussed in particular by comparing the microcrystallite volume fraction determined from SE and x-ray measurements. Strong variations in the nature of the material are observed during growth: the density deficiency and the surface roughness both increase as functions of film thickness up to 0.4–0.5 μm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337289
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  • 7
    Digitale Medien
    Digitale Medien
    Multistable antiferroelectric liquid-crystal optical modulator (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3211-3213 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An electro-optical element based on antiferroelectric liquid crystal (AFLC) has been prepared by photopolymerization-induced anisotropic phase separation of a solution of an AFLC and a prepolymer. It consists of two adjacent layers, one comprised of the isotropic polymer and the other of the AFLC aligned by surface treatment of the adjacent substrate. The electro-optical properties show that these devices are either optically monostable or multistable (at zero field) with maximum memory angle of ∼15°. A qualitative model to describe the origin of memory in these AFLC/polymer composites is discussed. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122721
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  • 8
    Digitale Medien
    Digitale Medien
    Control of nematic director orientation by exposing rubbed polyimide films to linearly polarized ultraviolet light (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3162-3164 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The delicate interplay between the effects of mechanical rubbing and subsequent photo-induced chemical reactions on polyimide films has been studied for aligning liquid crystals. Exposure to linearly polarized ultraviolet (LPUV) light was found to profoundly alter the direction and the degree of molecular orientations obtained by rubbing. A simple model is presented to describe the observed changes in the director orientation. The results show that LPUV exposure can be very effectively used to control and fine-tune liquid crystal alignment. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120277
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  • 9
    Digitale Medien
    Digitale Medien
    A method for liquid crystal alignment using in situ ultraviolet exposure during imidization of polyimide (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3372-3374 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Homogeneous alignment of liquid crystals can be achieved by a technique using polyimide films and in situ exposure to linearly polarized ultraviolet (LPUV) light during imidization. The alignment layers prepared by this method exhibit higher thermal stability while requiring shorter processing time than the conventional UV alignment method which employs UV exposure after the imidization of polyimide is complete. Multidomain cells can be easily fabricated with the use of a photomask and multistep in situ LPUV exposure during hard bake. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122754
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  • 10
    Digitale Medien
    Digitale Medien
    Some 4H,12H-pyrano[2,3-.alpha.]phenoxazin-4-ones (1968)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 11 (1968), S. 913-914 
    Details
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jm00310a063
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