Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 2132-2137
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si-implant activation characteristics in AlxGa1−xAs for Al compositions of 0%–70% AlAs are presented for doses of 5.6×1012 and 2.8×1013 cm−2 at 100 keV. For both doses, the effective activation efficiency (ηeff) is relatively constant from 0% to 20% AlAs (ηeff=64% for 5.6×1012 cm−2 and 37% for 2.8×1013 cm−2 for 20% AlAs), goes through a minimum at 35% AlAs (ηeff=6.6% for 5.6×1012 cm−2 and 2.5% for 2.8×1013 cm−2), and then increases towards 70% AlAs (ηeff=52.8% for 5.6×1012 cm−2 and 31.1% for 2.8×1013 cm−2). The results are explained based on the compositional dependence of the ionization energy and conduction band density-of-states of AlGaAs. The effects of P coimplantation is also studied but demonstrates no significant enhancement of the activation efficiency of Si implantation for 0%–70% AlAs. Finally, data are presented for Se implantation in Al0.2Ga0.8As with a maximum effective activation efficiency of 5.6% achieved. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363556
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