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  • 1
    Electronic Resource
    Electronic Resource
    n-type ion implantation doping of AlxGa1−xAs (0≤x≤0.7) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2132-2137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-implant activation characteristics in AlxGa1−xAs for Al compositions of 0%–70% AlAs are presented for doses of 5.6×1012 and 2.8×1013 cm−2 at 100 keV. For both doses, the effective activation efficiency (ηeff) is relatively constant from 0% to 20% AlAs (ηeff=64% for 5.6×1012 cm−2 and 37% for 2.8×1013 cm−2 for 20% AlAs), goes through a minimum at 35% AlAs (ηeff=6.6% for 5.6×1012 cm−2 and 2.5% for 2.8×1013 cm−2), and then increases towards 70% AlAs (ηeff=52.8% for 5.6×1012 cm−2 and 31.1% for 2.8×1013 cm−2). The results are explained based on the compositional dependence of the ionization energy and conduction band density-of-states of AlGaAs. The effects of P coimplantation is also studied but demonstrates no significant enhancement of the activation efficiency of Si implantation for 0%–70% AlAs. Finally, data are presented for Se implantation in Al0.2Ga0.8As with a maximum effective activation efficiency of 5.6% achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363556
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  • 2
    Electronic Resource
    Electronic Resource
    Electron energy loss spectroscopy (EELS) of CH3NH2 adsorbed on Ni(100), Ni(111), Cr(100), and Cr(111) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 6001-6008 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Adsorbed CH3NH2 has been studied on Ni(100), Ni(111), Cr(100), and Cr(111) at 300 K using electron energy loss spectroscopy. The vibrational spectra indicate that molecular CH3NH2 exists on all four surfaces with bonding through the nitrogen lone pair, although a substantial amount of dissociation also occurs on the chromium surfaces. Approximately one monolayer of surface species is the stable coverage on each surface at 300 K. The possible existence of coadsorbed dissociation products CHx and NHx is discussed. The CN stretch is anomalously broad on Ni (100) and Ni(111) but not detectably broadened on Cr(100), indicating a strong sensitivity of this bond to interactions with the Ni surfaces. A multiplicity of sites is indicated on Cr(111) by the breadth of all the peaks. The loss spectra exhibit striking intensity differences, which can be attributed partly to impact scattering and partly to intrinsic differences in the interaction of CH3NH2 with the different surfaces. A model explaining the linewidth and intensity differences is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449634
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  • 3
    Electronic Resource
    Electronic Resource
    InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (Eg=1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126476
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  • 4
    Electronic Resource
    Electronic Resource
    InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2262-2264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In0.03Ga0.97As0.99N0.01/GaAs DHBT has a low VON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In0.03Ga0.97As0.99N0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BVCEO) is 10 V, consistent with the BVCEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base–collector junction. The improved device has a peak current gain of seven with ideal current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126315
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic chemical vapor deposition on c-axis Al2O3. Secondary ion mass spectrometry measurements showed no increase in the O concentration (2–3×1018 cm−3) in the AlGaN emitter and fairly low levels of C (∼4–5×1017 cm−3) throughout the structure. Due to the nonohmic behavior of the base contact at room temperature, the current gain of large area (∼90 μm diameter) devices was 〈3. Increasing the device operating temperature led to higher ionization fractions of the Mg acceptors in the base, and current gains of ∼10 were obtained at 300 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123942
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  • 6
    Electronic Resource
    Electronic Resource
    Sputtered AlN encapsulant for high-temperature annealing of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 538-540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactively sputtered AlN is shown by electrical characterization of Pt/Au Schottky diodes to be an effect encapsulant for GaN annealed at 1100 °C. Schottky diodes formed on GaN encapsulated with AlN during the anneal had low reverse leakage currents with breakdown voltages in excess of 40 V. In contrast, samples annealed without the AlN layer had 3–4 orders-of-magnitude higher reverse leakage currents. Atomic force microscopy images of as-grown and annealed samples also demonstrate an increase in surface roughness and a change in morphology of the uncapped samples following annealing. Auger electron spectroscopy supports the hypothesis that the AlN encapsulant is reducing N loss from the GaN substrate. N loss in the uncapped samples is expected to create an n+-region at the surface that accounts for the high reverse leakage current and improved Ohmic behavior for the uncapped samples. The use of AlN encapsulation will enable the realization of all ion implanted GaN metal semiconductor field effect transistors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117779
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial layer thickness measurement by cross-sectional atomic force microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3353-3355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An epitaxial layer thickness measurement technique has been developed using cross-sectional atomic force microscopy (XSAFM). Cleaved and etched epitaxial heterostructures of Al0.5Ga0.5As/GaAs have been analyzed using this technique. XSAFM analysis of a 20.5 period structure of 300-A(ring)-thick Al0.5Ga0.5As/GaAs layers agreed to within 2% of x-ray diffraction data. XSAFM analysis of a structure consisting of GaAs wells ranging from ∼15 to 600 A(ring) with 300 A(ring) Al0.5Ga0.5As barriers was also performed. The XSAFM measured well thicknesses agreed quite well with photoluminescence (PL) measurements taken at 4 K. XSAFM can thus serve as a rapid alternative to conventional thickness measurement techniques such as SEM and TEM. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116055
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  • 8
    Electronic Resource
    Electronic Resource
    Ion-implanted GaN junction field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2273-2275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a ∼1.7 μm×50 μm JFET with a −6 V threshold voltage, a maximum transconductance of 7 mS/mm at VGS=− 2V and saturation current of 33 mA/mm at VGS=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized n+ implants in the source and drain regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115882
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  • 9
    Electronic Resource
    Electronic Resource
    Thermodynamically stable p-channel strained-layer AlGaAs/InGaAs/GaAs heterostructure field effect transistor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 752-754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device characteristics of a thermodynamically stable p-channel, strained quantum-well heterostructure field effect transistor (HFET) are reported. The AlGaAs/InGaAs/GaAs material system was used to fabricate the p-channel HFETs with Al and In mole fractions of 0.20 and 0.18, respectively. Transconductances of 32 and 94 mS/mm were achieved at 300 and 77 K, respectively, for devices with 1.2 μm recessed gates. These numbers are comparable to InGaAs quantum-well, recessed gate pHFETs whose quantum-well thicknesses exceed the thermodynamic stability limit. These results have important implications for high performance self-aligned devices which require high-temperature processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112220
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  • 10
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    Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors (2000)
    American Institute of Physics
    Details
    Publication Date: 2000-05-22
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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