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The structural, chemical, and electronic properties of a stable GaS/GaAs interface (1999)

Cao, X. A. ; Hu, H. T. ; Dong, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 6940-6944

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371776

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