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  • 1
    Digitale Medien
    Digitale Medien
    The structural, chemical, and electronic properties of a stable GaS/GaAs interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6940-6944 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371776
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  • 2
    Digitale Medien
    Digitale Medien
    A mild electrochemical sulfur passivation method for GaAs(100) surfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2764-2766 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360074
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  • 3
    Digitale Medien
    Digitale Medien
    Investigation of neutralized (NH4)2S solution passivation of GaAs (100) surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120252
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  • 4
    Digitale Medien
    Digitale Medien
    Free boson representation of DY(h-dash-bar)(glN)k and DY(h-dash-bar)(slN)k (1998)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 39 (1998), S. 2273-2289 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: We construct a realization of the Yangian double DY(h-dash-bar)(glN)k and DY(h-dash-bar)(slN)k for an arbitrary level k in terms of free boson fields with a continuous parameter. In the (h-dash-bar)→0 limit this realization becomes the Wakimoto realization of affine Lie algebras glN and slN, respectively. The vertex operators and the screening currents are also constructed with the same spirits; the screening currents commute with DY(h-dash-bar)(slN) modulo total difference. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.532288
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  • 5
    Digitale Medien
    Digitale Medien
    Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 315-317 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111190
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  • 6
    Digitale Medien
    Digitale Medien
    S2Cl2 treatment: A new sulfur passivation method of GaAs surface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a new sulfur passivation method—S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111261
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  • 7
    Digitale Medien
    Digitale Medien
    Electrochemical sulfur passivation of GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107475
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  • 8
    Digitale Medien
    Digitale Medien
    Neutralized (NH4)2S solution passivation of III–V phosphide surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Synchrotron radiation photoelectron spectroscopy has been used to investigate III–V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick sulfide layer with P–S bond and strong Ga–S (In–S) bond of high thermal stability is formed on the neutralized (NH4)2S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)2S solutions to III–V phosphide surfaces are also discussed. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122649
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  • 9
    Digitale Medien
    Digitale Medien
    Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Organic electroluminescent devices using SiO2 as a hole-injecting buffer have been fabricated. With the presence of the buffer, the luminance of the device reaches 1820 cd/m2 at the current density of 20 mA/cm2, which corresponds to an efficiency of 9.1 cd/A. The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123809
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  • 10
    Digitale Medien
    Digitale Medien
    Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 609-611 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium–tin–oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123161
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