Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 609-611
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium–tin–oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123161
|
Location |
Call Number |
Expected |
Availability |