Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 574-576
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn−, n=1–3) ion implantation with the same atomic boron dose and energy. This Bn− series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1− implantation has less TED and less boron–interstitial clustering than B2− and B3− implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125821
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