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  • 1
    facet.materialart.
    Unknown
    Depth profile of methanol in site D2 and site D6 in the northwest Pacific Ocean in May 2021 (2023)
    PANGAEA
    Details
    Publication Date: 2024-01-06
    Description: We investigated the seawater methanol abundance in the northwest Pacific Ocean (NWPO) area. Seawater samples were collected during May-June 2021 aboard the R/V “Dongfanghong 3” in the northwest Pacific Ocean. Seawater was sampled using a Seabird 911 CTD-Niskin rosette system equipped with conductivity, temperature and depth sensors. Methanol samples were collected directly without filters and then stored at -80℃ for laboratory analysis. Methanol concentrations were determined by a modified commercial purge and trap system combined with Agilent GC-8890 gas chromatograph with a flame ionization detector. This dataset includes two over 5000m depth profiles of methanol.
    Keywords: Agilent GC-8890 gas chromatograph with a flame ionization detector; air-sea exchange; CTD/Rosette; CTD-RO; DEPTH, water; Dong Fang Hong 3; Event label; Latitude of event; Longitude of event; methanol; Methanol; microbial metabolism; North Pacific Ocean; Northwest Pacific Integrated Research Cruise; Northwest Pacific Ocean; NWPIRC; NWPIRC_D2-1; NWPIRC_D2-2; NWPIRC_D6-1; NWPIRC_D6-2; source and sink
    Type: Dataset
    Format: text/tab-separated-values, 47 data points
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  • 2
    facet.materialart.
    Unknown
    Methanol distribution and metabolic rate in the northwest Pacific Ocean in May/June 2021 (2023)
    PANGAEA
    Details
    Publication Date: 2024-01-06
    Description: We investigated the seawater methanol abundance, the dynamic of microbial methanol (MeOH) metabolism and the geochemical parameters in the northwest Pacific Ocean (NWPO) area. Seawater samples were collected during May-June 2021 aboard the R/V “Dongfanghong 3” in the northwest Pacific Ocean. Seawater was sampled using a Seabird 911 CTD-Niskin rosette system equipped with conductivity, temperature and depth sensors. Methanol samples were collected directly without filters and then stored at -80℃ for laboratory analysis. Methanol concentrations were determined by a modified commercial purge and trap system combined with Agilent GC-8890 gas chromatograph with a flame ionization detector. Microbial methanol assimilation and oxidation rates were determined by quantifying 14C-MeOH incorporation into biomass and oxidation to CO2 (Zhuang et al., 2018). Nutrients were measured using Seal Analytical Quaatro nutrient autoanalyzer except for ammonium which was analyzed by a fluorometric method on board (Ning et al., 2013). Chlorophyll-a was measured by fluorometric method (Parsons et al., 1984).
    Keywords: 14C radioactive tracer incubation (Zhuang et al., 2018); Agilent GC-8890 gas chromatograph with a flame ionization detector; air-sea exchange; Ammonium; Chlorophyll a; Continuous Segmented Flow Analyzer, SEAL Analytical, QuAAtro39; CTD, Sea-Bird, SBE 911; CTD/Rosette; CTD-RO; DATE/TIME; Depth, bathymetric; DEPTH, water; Dong Fang Hong 3; Event label; Fluorometric method (Ning et al., 2013); Fluorometric method (Parsons et al., 1984); LATITUDE; LONGITUDE; methanol; Methanol; Methanol, assimilation rate; Methanol, assimilation rate, standard deviation; Methanol, oxidation rate; Methanol, oxidation rate, standard deviation; Methanol, total uptake rate; Methanol, total uptake rate, standard deviation; microbial metabolism; Nitrate; Nitrite; North Pacific Ocean; Northwest Pacific Integrated Research Cruise; Northwest Pacific Ocean; NWPIRC; NWPIRC_D1; NWPIRC_D2-1; NWPIRC_D3; NWPIRC_D4; NWPIRC_D5; NWPIRC_D6-1; NWPIRC_E1; NWPIRC_E10; NWPIRC_E11; NWPIRC_E12; NWPIRC_E2; NWPIRC_E3; NWPIRC_E4; NWPIRC_E5; NWPIRC_E6; NWPIRC_E7; NWPIRC_E8; NWPIRC_E9; Phosphate; Salinity; Ships weather station; Site; source and sink; Temperature, water; Wind speed
    Type: Dataset
    Format: text/tab-separated-values, 248 data points
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    DATA PANGAEA
  • 3
    facet.materialart.
    Unknown
    Methane concentrations and aerobic methane oxidation rates in the East China Sea and Yellow Sea (2023)
    PANGAEA
    Details
    Publication Date: 2024-01-06
    Description: We measured the methane concentrations and aerobic methane oxidation rates (MOx) in the seawater of East China Sea and Yellow Sea. Seawater samples were collected onboard "Dong Fang Hong 3" in April 2021 using a rosette system equipped with 24-liter Niskin bottles and a Seabird 911 CTD. Methane concentrations were measured using a purge-and-trap preconcentration method with a gas chromatography (Shimadzu GC-2014B) with a flame ionization detector. The rate constants of MOx and MOx rates were determined using a radiotracer approach through quantifying the conversion of added 3H-methane tracer to the oxidation product 3H-H2O.
    Keywords: A4; Aerobic methane oxidation; B1; B3; B4; B5; C2; CTD, Sea-Bird, SBE 911; D1; D4; Date/Time of event; DFH-3_2021-04; DFH-3_2021-04_A4; DFH-3_2021-04_B1; DFH-3_2021-04_B3; DFH-3_2021-04_B4; DFH-3_2021-04_B5; DFH-3_2021-04_C2; DFH-3_2021-04_D1; DFH-3_2021-04_D4; DFH-3_2021-04_E4; DFH-3_2021-04_E6; DFH-3_2021-04_F4; DFH-3_2021-04_F5; DFH-3_2021-04_FJ1; DFH-3_2021-04_FJ2; DFH-3_2021-04_FJ5; DFH-3_2021-04_H1; DFH-3_2021-04_H11; DFH-3_2021-04_H12; DFH-3_2021-04_H13; DFH-3_2021-04_H2; DFH-3_2021-04_P2; DFH-3_2021-04_P3; DFH-3_2021-04_P4; DFH-3_2021-04_P5; DFH-3_2021-04_P6; DFH-3_2021-04_S1; DFH-3_2021-04_S2; DFH-3_2021-04_S3; DFH-3_2021-04_S4; DFH-3_2021-04_T1; DFH-3_2021-04_T2; DFH-3_2021-04_T4; Dong Fang Hong 3; E4; E6; East China Sea; Elevation of event; Event label; F4; F5; First order oxidation rate constant; FJ1; FJ2; FJ5; H1; H11; H12; H13; H2; Latitude of event; Longitude of event; Methane; Methane oxidation rate; Optional event label; P2; P3; P4; P5; P6; Purge and trap gas chromatography; Radiotracer; S1; S2; S3; S4; T1; T2; T4; Yellow Sea
    Type: Dataset
    Format: text/tab-separated-values, 96 data points
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    DATA PANGAEA
  • 4
    Electronic Resource
    Electronic Resource
    Range distributions of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3269-3274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe have been measured by use of the 19F(p,αγ)16O resonance nuclear reaction at 872.1 keV with width Γ=4.2 keV. In order to obtain the true range distribution of implanted fluorine from the experimental excitation yield curve, a convolution calculation method is presented, from which the range distribution parameters such as the average projected range RP, the projected range straggling ΔRP and the skewness of the projected range distribution SK were obtained. These experimental range parameters were compared with those obtained by a theoretical calculation and by use of the trim89 program, and shows that for all the materials studied here the experimental RP values agree with the theoretical and the trim values very well but the experimental range straggling ΔRP are larger than those obtained by the theoretical calculation and the trim89. This phenomenon may be attributed to the enhanced diffusion during the ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345361
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  • 5
    Electronic Resource
    Electronic Resource
    Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4843-4847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9–2.0 μm, were implanted with Si ions at 1.2–2.6 MeV to doses in the range 1015–1016 cm−2. Subsequent rapid infrared thermal annealing was carried out at 850 °C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350627
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous ion channeling in InGaAs/GaAs strained heterojunction (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2100-2104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ion beam with different incident energies E was used to analyze a 500-A(ring)-thick In0.25Ga0.75As strained epitaxial film grown on GaAs (100) by molecular beam epitaxy. Ion channeling angular scans about 〈110〉 axis were carried out in (100) plane. When E is 5.8 MeV, the angular misalignment between 〈110〉 channels of the top layer and the substrate was 0.90°. We can calculate the planar strain of the epilayer, which is 1.62%. When incident ion energy was decreased, anomalous phemomena were observed in the angular scan profiles of the substrate. When E is 3.0 MeV, a serious asymmetry appeared in axial scan profile of the substrate; When E is 1.2 MeV, the angular misalignment reduced to 0.60°, and the critical angle for channeling of the substrate is 1.25° which is much larger than that of the epilayer, 0.95°. The physical mechanism giving rise to these phenomena is discussed, and the causes and conditions for these phenomena taking place were pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346564
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  • 7
    Electronic Resource
    Electronic Resource
    Retardation of boron diffusion in silicon by defect engineering (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si+ ions to produce a surface vacancy-rich region, we studied the diffusion of deposited B on predamaged samples with annealing between 900 and 1010 °C. Boron diffusion retardation was observed in both implantation conditions after low temperature annealing with enhancement occurring in a 50 keV implanted sample at high temperature. Choosing high energy implantation to separate vacancies and interstitials can reduce the boron diffusion significantly. Such suppression became more obvious with higher implant doses. A junction less than 10 nm deep (at 1×1017 cm−3 according to carrier concentration profiles) can be formed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361280
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  • 8
    Electronic Resource
    Electronic Resource
    Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn−, n=1–3) ion implantation with the same atomic boron dose and energy. This Bn− series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1− implantation has less TED and less boron–interstitial clustering than B2− and B3− implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125821
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  • 9
    Electronic Resource
    Electronic Resource
    High-energy recoil implantation of boron into silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3953-3955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One approach to fabricate shallow junctions made of B-doped Si is to deposit B on Si, followed by knocking the B into the Si substrate with Si ions. Conventional belief is that the higher the implantation energy, the deeper the recoil profile. While this is true for low-energy incident ions, we show here that the situation is reversed for incident Si ions of higher energy due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Our experiments show that 500 keV high-energy recoil implantation produces a shallower B profile than lower-energy implantation such as 10 and 50 keV. The secondary ion mass spectrometry analysis shows that the distribution of recoiled B atoms scattered by the energetic Si ions agrees with that calculated on the basis of interatomic potential suggested by W. D. Wilson, L. G. Haagmark, and J. P. Biersack [Phys. Rev. B 15, 2458 (1977)]. Sub-100 nm p+/n junctions have been realized with a 500 keV Si ion beam. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126832
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  • 10
    Electronic Resource
    Electronic Resource
    H"α emission and target excitations in collisions ofH"m^+ (m = 1, 2, 3) with Li and Na at 20-150 keV
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 51 (1990), S. 237-241 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(90)90494-F
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