ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract R0A is an important measure of diode performance. In theory, it should be possible to predict R0 from material parameters; in particular composition, carrier concentration and lifetime. We have tested this hypothesis by making diodes in fully characterized material and comparing the measured and predicted R0. Three types of undoped epitaxial CdHgTe were used and the junctions were formed by ion beam milling. At 192 K the predicted and measured R0 values are comparable. At this temperature, diode leakage is predominantly diffusion current from the p-side of the junction and analysis of the R0 versus hole concentration data shows that Auger generation is responsible. At 77 K the situation is more complicated due to n-side leakage currents and possibly generation in the depletion layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008984720335
