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Formation of elemental Ag precipitates in AlGaAs by ion implantation and thermal annealing (1997)

Chang, J. C. P. ; Ye, J. ; Melloch, M. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 3501-3503

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report transmission electron microscopy (TEM) studies of precipitation in Ag-implanted and annealed Al0.3Ga0.7As. Silver was chosen because it does not form compounds with Ga and/or As when precipitating based on bulk thermodynamics arguments. TEM confirmed the formation of an elemental metal/semiconductor composite, which consists of nanometer-sized Ag (fcc structure) precipitates dispersed in the matrix. The precipitates are nonspherical and have an orientation relationship to Al0.3Ga0.7As of (200)Ag//(200)AlGaAs, (02-2)Ag//(02-2)AlGaAs, and [011]Ag//[011]AlGaAs. High temperature (900 °C) anneals transform the phase of the precipitate to hexagonal, Ag3(GaAl) compounds. This shape distribution has been correlated with inhomogeneous broadening of the optical absorption. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120372

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