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  • Articles  (153)
  • 68.55  (153)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Energy, Environment Protection, Nuclear Power Engineering
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  • Articles  (153)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (153)
  • Energy, Environment Protection, Nuclear Power Engineering
  • Physics  (155)
  • 1
    Electronic Resource
    Electronic Resource
    Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth (1979)
    Springer
    Applied physics 19 (1979), S. 63-70 
    Details
    ISSN: 1432-0630
    Keywords: 65 ; 82.65 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10−2 monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900540
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  • 2
    Electronic Resource
    Electronic Resource
    Optical waveguides on SiO2 substrates prepared by Pb−Si counterdiffusion (1980)
    Springer
    Applied physics 21 (1980), S. 159-162 
    Details
    ISSN: 1432-0630
    Keywords: 42.82 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surface layers of the optimal composition of PbO0.5SiO2 0.5 were prepared on fused quartz substrates by Pb-Si counterdiffusion and their properties were studied experimentally. Prism coupling experiments have shown that these layers can be used as low-mode optical waveguides of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900678
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  • 3
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 4
    Electronic Resource
    Electronic Resource
    Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengths (1982)
    Springer
    Applied physics 27 (1982), S. 133-138 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15-g ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser initiated formation of Cd-deposits from dimethylcadmium (DMCd) on quartz substrates has been investigated at various wavelengths between 337 and 676 nm. In this range substrate and DMCd are both transparent. The deposition mechanism is initiated by multiphoton dissociation of DMCd molecules adsorbed at the glass substrate and continues by pyrolysis of DMCd molecules at the laser-heated metallic deposit. Metal structures with a resolution below 1 μm have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616663
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamic RHEED observations of the MBE growth of GaAs (1984)
    Springer
    Applied physics 34 (1984), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616915
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  • 6
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 7
    Electronic Resource
    Electronic Resource
    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617177
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  • 8
    Electronic Resource
    Electronic Resource
    SEM, SAED, and TEM investigations of domain structure in PZT ceramics at morphotropic phase boundary (1985)
    Springer
    Applied physics 37 (1985), S. 237-242 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 64 ; 68.55 ; 77.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract SEM investigations of ferroelectric domain structure in PbZr0.53Ti0.47O3 are consistent with a model of spatial domain configuration for the piezoelectric ceramics previously proposed for BaTiO3. TEM and SAED results revealed not only the twinning relation of adjacent tetragonal 90° domains but also the simultaneous presence of the ferroelectric rhombohedral phase. A succession model of ferroelectric domains T1RT2RT1... which needs a smaller energy for the rotation of the polarization vector due to the coexistence of a R domain between the two T 90° domains is proposed. This model is also confirmed by the estimated value of elastically stored energy in the mixed wall and by the dependence upon the sintering temperature of T and R unit cell distortions previously measured by x-ray diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614823
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon migration during MBE growth of doped (A1, Ga)As films (1986)
    Springer
    Applied physics 41 (1986), S. 237-241 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 66.30J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616845
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-beam induced mixing in Al-Ni (1985)
    Springer
    Applied physics 36 (1985), S. 103-111 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam induced mixing of Al-Ni has been studied using N 2 + and Ar+ bombardment. High dose (4×1017 ions cm−2) nitrogen bombardment was found to cause blister formation with no unambiguous evidence of mixing. However, using argon ions at elevated substrate temperatures (400–450 °C) led to extensive mixing of 2000 Å Al layers on Ni. The mixing mechanism is considered to be point defect mediated radiation enhanced diffusion with a possible contribution from cascade mixing and interfacial oxide layer breakdown during the initial stages of treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620616
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  • 11
    Electronic Resource
    Electronic Resource
    Characterization of thin silicon oxide obtained by lamp heating (1987)
    Springer
    Applied physics 43 (1987), S. 301-304 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.30 ; 3.40 Q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited. Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635188
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  • 12
    Electronic Resource
    Electronic Resource
    Analysis of rapid dry oxidation of silicon (1988)
    Springer
    Applied physics 46 (1988), S. 67-71 
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    ISSN: 1432-0630
    Keywords: 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By analyzing the most recent models on rapid initial oxidation and the experimental data at low temperatures we prove unambiguously that neither enhanced nor retarded oxygen diffusion nor any kind of additional oxygen transport flux can account for anomalous initial regime of silicon dry oxidation. The rapid growth is mainly due to the enhanced oxygen solubility and partly to the enhancement of the reaction rate constantk s. We argue that the reaction rate depends linearly on the oxygen solubility for low solubilities pertinent to dry oxidation but that it saturates at high solubilities characteristic for the wet oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615138
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  • 13
    Electronic Resource
    Electronic Resource
    Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser (1988)
    Springer
    Applied physics 45 (1988), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 68.15 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617943
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  • 14
    Electronic Resource
    Electronic Resource
    Diamond-like carbon films prepared by pulsed-laser evaporation (1988)
    Springer
    Applied physics 45 (1988), S. 355-360 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 68.55 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Diamond-like carbon thin films were prepared by pulsed-laser evaporation. In this method a carbon target was irradiated by a XeCl laser with a power density of 3×108 W/cm2 and carbon atoms, together with a small number of ions, were produced. Deposition rates and film properties changed sensitively with substrate temperature. The films deposited at 50°C were diamond-like, having reasonable hardness, high refractive index (2.1–2.2 at 633 nm), optical transparency in the infrared, electrical resistivity of 108 Ω cm and chemical inertness (no dissolution in a HF∶HNO3 solution). The band gap measured from optical absorption was 1.4 eV. Raman spectrum and infrared absorption, whose features varied with the substrate temperature, were also measured. The films were amorphous and no crystallinity was observed, as confirmed by x-ray diffraction, transmission electron diffraction and Raman spectroscopy. Hydrogen atoms were incorporated in the films with a typical H/C ratio of 0.3. The application of a negative bias to the substrate modified the deposition due to the presence of ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617942
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  • 15
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618702
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  • 16
    Electronic Resource
    Electronic Resource
    Interdiffusion, reaction, and stability in a thin film iron-aluminium bilayered system (1989)
    Springer
    Applied physics 48 (1989), S. 481-488 
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    ISSN: 1432-0630
    Keywords: 68.55N ; 68.55 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work we describe the results of Rutherford backscattering spectrometry, sheet resistivity measurements, X-ray diffractometry and conversion electron Mössbauer spectroscopy performed on thin film Fe-Al bilayered samples submitted to high vacuum furnace annealing. Isothermal anneals were performed at 570 K for time intervals ranging from 60 to 600 min. It is demonstrated that the diffusion of Al into Fe is smaller than the diffusion of Fe into Al for temperatures below 600 K. Sequential isochronous thermal anneals of 60 min were performed at temperatures ranging from 570 to 870 K, in order to study the stability of the formed phases. The stable Fe2Al5 intermetallic compound formed at 570 K decomposes at about 650 K, and the FeAl6 intermetallic compound appears at temperatures around 750 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619722
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  • 17
    Electronic Resource
    Electronic Resource
    Silicon carbide synthesis with energy pulses (1989)
    Springer
    Applied physics 49 (1989), S. 181-187 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20H ; 79.20D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polycrystalline SiC layers were synthesized through nanosecond pulse heating of thin carbon films deposited on single-crystalline silicon wafers. The samples were submitted to electron beam irradiation (25 keV, 50 ns) at various current densities in vacuum (∼10−4mbar) and to XeCl excimer laser pulses (308 nm, 15ns) in air. Rutherford backscattering spectrometry (RBS) showed that in the e-beam annealed samples mixing of the elements at the interface starts at current densities of about 1200 A/cm2. The mixed layer thickness increases almost linearly with current density. From the RBS spectra a composition of the intermixed layers close to the SiC compound was deduced. Transmission electron microscopy (TEM) and electron diffraction studies clearly evidenced the formation of SiC polycrystals. Using the XeCl excimer laser, intermixing of the deposited C film with the Si substrate was observed after a single 0.3 J/cm2 pulse. Further analysis evidenced the formation of SiC nanocrystals, embedded in a diamond film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616297
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  • 18
    Electronic Resource
    Electronic Resource
    Passivation of n-GaAs (100) surface by a Langmuir-Blodgett film (1990)
    Springer
    Applied physics 50 (1990), S. 499-502 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the results of passivation of n-GaAs surface by Langmuir-Blodgett films. The capacitance-voltage and current-voltage characteristics in a metal-insulator-semiconductor configuration fabricated using films as insulators, show that the frequency dispersion of the accumulation capacitance is small, indicating that the high frequency capacitance under accumulation is due to the LB film. It has been shown that it reduces the surface barrier characteristic of GaAs surfaces, and may offer hope for unpinning the surface Fermi level. We offer a possible explanation for these findings in terms of the advanced unified defect and the effective work function models.
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    URL: http://dx.doi.org/10.1007/BF00324574
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  • 19
    Electronic Resource
    Electronic Resource
    Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source (1990)
    Springer
    Applied physics 51 (1990), S. 344-346 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.
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    URL: http://dx.doi.org/10.1007/BF00324317
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  • 20
    Electronic Resource
    Electronic Resource
    InSb/CdTe heterostructures grown by MBE (1991)
    Springer
    Applied physics 52 (1991), S. 19-27 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract InSb/CdTe heterostructures were grown by MBE, including a 10 layer “superlattice”. The structures were characterized by X-ray diffraction, van der Pauw measurements, and SNMS depth profiling. The interfaces widen because of interdiffusion and through the formation of an interface compound from the reaction of Te with the InSb surface. The interface compound is identified as strained InTe(II). The interfaces are still too wide for practical devices. Thermochemical analysis indicates that the reaction can be suppressed by applying a Cd overpressure. The diffusion of In and Sb in CdTe is very fast and will necessitate a MEE growth scheme at lower temperatures.
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    URL: http://dx.doi.org/10.1007/BF00323680
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  • 21
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    Optical and structural properties of thin films deposited from laser fused Zirconia, Hafnia, and Yttria (1992)
    Springer
    Applied physics 54 (1992), S. 533-537 
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    ISSN: 1432-0630
    Keywords: 78.65 ; 68.55 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical and structural properties of films deposited from laser sintered Zirconia (ZrO2), Hafnia (HfO2), and Yttria (Y2O3) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO2 films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO2 films deposited from the laser sintered material. HfO2 and Y2O3 films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO2 and Y2O3 prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO2 films were found to be amorphous.
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    URL: http://dx.doi.org/10.1007/BF00324335
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  • 22
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    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
    Springer
    Applied physics 54 (1992), S. 527-532 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
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    URL: http://dx.doi.org/10.1007/BF00324334
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  • 23
    Electronic Resource
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    Enhanced adhesion of metal films on PET after UV-laser treatment (1992)
    Springer
    Applied physics 55 (1992), S. 391-392 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adhesion-force of thin metal films on PET foils can be significantly improved by UV excimer-laser irradiation of the polymer surface prior to metal deposition. The laser fluences required are well below the ablation threshold.
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    URL: http://dx.doi.org/10.1007/BF00324090
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  • 24
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    Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser (1993)
    Springer
    Applied physics 57 (1993), S. 181-185 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.
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    URL: http://dx.doi.org/10.1007/BF00331442
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    Atomic-resolution imaging and spectroscopy of semiconductor interfaces (1993)
    Springer
    Applied physics 57 (1993), S. 385-391 
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    ISSN: 1432-0630
    Keywords: 61.14 ; 68.48 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Incoherent Z-contrast imaging uses a high-angle annular detector to collect only highly local, incoherently generated scattering with the result that images become dependent on intensities, not phases. No model structures are required for a first-order structure determination, and the images remain intuitively interpretable even at interfaces. Under suitable conditions, incoherently generated inelastic scattering may be collected simultaneously with a large-aperture axial spectrometer, and, by using the Z-contrast image to locate the scanning transmission electron microscope (STEM) probe over selected atomic columns, can provide an atomic-resolution chemical analysis. This is demonstrated with reference to an epitaxial CoSi2/Si(100) interface, achieving a 2.7 Å spatial resolution. Recent insights into the growth and relaxation of strained Si-Ge epitaxial films are described, highlighting the role of stress concentrations, and contrasting the case of a free surface with that of a surface constrained by an oxide layer.
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    URL: http://dx.doi.org/10.1007/BF00331776
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    Improvement of corrosion resistance of carbon steel using chemical vapor deposition from the mixture of Mo(CO)6 and Cr(CO)6 with an ArF-excimer laser (1994)
    Springer
    Applied physics 58 (1994), S. 99-105 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The corrosion resistance of carbon steel has been improved by the deposition from the mixture of Mo(CO)6 and Cr(CO)6 as well as from each carbonyl alone with an ArF-excimer laser (193 nm). The corrosion resistance attained by coating with the films from the mixture is higher than from Mo(CO)6 alone, while lower than from Cr(CO)6 alone. While the corrosion resistance increases with beam intensity monotonically over the range 4–25 MW cm−2 for the deposition from Cr(CO)6 alone, it tends to decrease slightly above 15 MW cm−2 for the deposition from Mo(CO)6 alone and from the mixture. SEM (Scanning Electron Microscope) photographs show that the films from each carbonyl and their mixture consist of small grains that are more densely packed at higher beam intensities. The comparison of the film thickness evaluated from sputtering time to remove the films with that from direct observation with SEM suggests that the density of the film increases with beam intensity. In the films deposited from the mixture, molybdenum is preferentially incorporated from the gas phase.
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    URL: http://dx.doi.org/10.1007/BF00331525
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    A simple estimate of deposited energy and concentration profiles in films produced by Ion-Assisted Physical Vapour Deposition (1994)
    Springer
    Applied physics 58 (1994), S. 619-622 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Analytical expressions for estimating the energy dissipation and the film constituent concentration profiles in films grown by Ion-Assisted Physical Vapour Deposition (IA PVD) are given. Two cases of IA PVD are considered: ion-assistance performed by inert-gas ions as well as by ions of a film constituent. As an example of application, concentration and damage depth profiles in h-BN films grown by IA PVD are calculated and a comparison is made with results obtained by computer simulation.
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    URL: http://dx.doi.org/10.1007/BF00348175
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    Scanning and friction-force microscopy of thin C60 films on GeS(001) (1994)
    Springer
    Applied physics 59 (1994), S. 11-15 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface morphology of thin C60 films grown epitaxially under ultra-high vacuum conditions on layered GeS(001) substrates has been studied by scanning force microscopy. The individual C60 layers were imaged down to molecular resolution. The growth mechanism was found to be of layer-by-layer type at the initial stages of growth, but seems to be very sensitive to the substrate temperature. The tribological properties of these films have been probed simultaneously by means of lateral force microscopy. The frictional coefficient of the C60 layers was determined to be significantly smaller than the frictional coefficient of the GeS substrate. This demonstrates that well-ordered C60 films can have even better lubricating properties than a layered material.
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    URL: http://dx.doi.org/10.1007/BF00348413
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    Observation of the early stages of growth and the formation of growth spirals in epitaxial YBa2Cu3O7-δ thin films by AFM (1994)
    Springer
    Applied physics 59 (1994), S. 49-56 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70 ; 74.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin epitaxial films of YBa2Cu3O7−δ on SrTiO3 prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa2Cu3O7−δ) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.
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    URL: http://dx.doi.org/10.1007/BF00348419
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    Spatially-resolved characterization of HTSC-films near T c by laser raster microscopy with thermal excitation (1993)
    Springer
    Applied physics 56 (1993), S. 119-122 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method (laser raster microscopy with thermal excitation, LRMTE) for characterizing high-T c thin-film superconductors (HTSC) with microscopic resolution is described. By means of spatially resolved laser excitation and subsequent monitoring of the time dependence of the film resistivity at a base temperature near the transition temperature T c, spatial variations of the transition temperature (T c), of the temperature coefficient of the resistivity (dQ/dT), of the heat conductivity and heat capacity of the film and of the heat conductivity between film and substrate can be detected with high spatial resolution (15 μm have been achieved so far).
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    Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 571-574 
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    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
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    High-resolution electron energy-loss spectroscopy at epitaxially grown GaAs(100) (1995)
    Springer
    Applied physics 60 (1995), S. 567-572 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-Resolution Electron Energy-Loss Spectroscopy (HREELS) is shown to be a very sensitive tool to investigate the space-charge regime of n-respectively p-type semiconductors. The most simple model we applied to fit experimental spectra is based on a step-like distribution of free carriers with the Drude dielectric response function. In this case, the dispersion of surface plasmon excitations is neglected, but it is considered in the Thomas-Fermi and the Debye-Hückel models. We use these models to fit HREELS-spectra, obtained from heavily Si-doped GaAs(100), which was grown by Molecular Beam Epitaxy (MBE). A comparison shown that the Drude model overestimates both the free-carrier concentration and the plasmon damping factor. The use of a more realistic smooth free-carrier profile, obtained by the self-consistent solution of the Schrödinger and Poisson equations, leads to plasmon excitations with lower frequencies. Besides Ohmic damping, the calculations show that Landau damping should be incorporated in order to obtain a better fit, particularly at intermediate frequencies.
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    An investigation of point defects in silicon carbide (1995)
    Springer
    Applied physics 61 (1995), S. 55-58 
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    Keywords: 61.70 ; 68.55 ; 78.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurement on bulk samples of single crystal SiC wafers have shown that both 6H and 4H polytypes exhibit a bulk lifetime of 150±2ps. All samples contained a second, defect-related lifetime component, ranging in value from 250 to about 300 ps with rather low intensities. The defect structure exhibited by the nanocrystalline samples is, not unexpectedly, much more complex. Positron beam experiments on Electron Cyclotron Resonance Chemical Vapour Deposited (ECR-CVD) SiC thin films showed that the positrons are very sensitive to changes in important film parameters as a function of the deposition conditions. It was found that the film density is lower than expected, probably due to hydrogen incorporation; variations in compositions among different films were detected through variations in theS parameters, and differences were observed in the electric field at the film-substrate interface due to hydrogen passivation of dangling bonds and different substrate resistivities.
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    Selective imaging of self-assembled monolayers by tunneling microscopy (1994)
    Springer
    Applied physics 59 (1994), S. 135-138 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of thin organic films offer many challenging opportunities for science and technology. A crucial requirement for the advancement of molecular film technology is the selective characterization and modification on an atomic level. Local proximal probes like Scanning Tunneling Microscopy (STM) or Atomic Force Microscopy (AFM) bear certainly the potential for this purpose. So far, however, mainly adsorbed organic molecules lying flat on a smooth substrate have been imaged with near atomic resolution. Here, we demonstrate the ability of STM to selectively image self-assembled monolayers of long-chain molecules (hexanethiol) oriented upright on the substrate Au(111) with molecular resolution. Upon proper choice of the tunneling parameters we can image the molecular head-group anchored at the substrate and/or the molecular tail group.
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    Vibrational property of the slow N 2 + ions deposited SiNx films (1994)
    Springer
    Applied physics 59 (1994), S. 445-448 
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    ISSN: 1432-0630
    Keywords: 61.14 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated vibrational properties of silicon-nitride films, SiNx (0.3≤×≤1.33), produced by a non-thermal method using high-resolution electron energy loss spectroscopy. The results, based on a continuous random network model assuming a planar XY3 vibrational bond unit, show that the Si-N bonds in the films closely resemble those in typical thermal silicon nitride although nitrogens occupy some metastable binding sites. We estimate force constants of the restoring forces for a Si3N bond unit, which tend to increase gradually with increasing nitrogen content x. In particular, the central force constant k1 for the in-plane stretching mode of silicon atoms varies with x in the range 297≤k≤331 N/M, larger than the theoretical value for a nitrogen atom imbedded in a pure Si crystal.
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    Physical properties of GaAs on glass (1996)
    Springer
    Applied physics 62 (1996), S. 237-240 
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    ISSN: 1432-0630
    Keywords: 78.65 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Physical properties of GaAs layers grown by molecular beam epitaxy on glass substrates are investigated by Raman light scattering, Photothermal Deflection Spectroscopy (PDS), optical absorption and Scanning Electron Microscopy (SEM) measurements. The results indicate that the layers are polycrystalline and strain-free. Raman spectra exhibit GaAs-TO and LO modes at 260 and 283 cm−1, respectively. The peaks are shifted by about 10 cm−1 with respect to bulk GaAs which we attribute to local heating effects induced by laser excitation. The phonon lines are strong and have a bandwidth of about 5 to 8 cm-1 indicating a good crystalline quality. However, neither photoluminescence nor the Hall effect could be observed that is suggestive of the presence of a large number of electronic defects. SEM micrographs taken from the surface and the interface exhibit a granular structure with the polycrystal sizes of well under 1 μm. PDS results show about 1018 cm−3 defects and some disorder at the band gap.
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    A new structure of In-based ohmic contacts ton-type GaAs (1996)
    Springer
    Applied physics 62 (1996), S. 241-245 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 72.20 ; 73.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn +-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n +-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱ c) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In x Ga1− xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.
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    Parametric dependence of the properties of pulsed-laser-deposited diamond-like carbon films (1996)
    Springer
    Applied physics 63 (1996), S. 287-292 
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    ISSN: 1432-0630
    Keywords: 68.60 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of Pulsed-Laser-Deposited Diamond-Like Carbon (PLD DLC) films are studied as functions of the power densityΦ and the wavelengthλ of the laser beam, and the incident angleϑ of the beam relative to the normal of the target surface. All the films have a similar structure consisting of graphite particulates embedded in a continuous matrix, so the macroscopic performance of the films is determined by the overall contributions of the particulates and the matrix. The use of higherΦ, shorterλ, or largerϑ leads to an enhancement of the diamond-like characteristics and a simultaneous increase of the particulate density. These two effects give opposite contributions to the electrical conductivityσ R, leading to the following results. (i) σR drops with increasingΦ in the lowΦ range (region I) due to the stronger diamond-like nature of the matrix, but increases sharply afterΦ has exceeded a thresholdΦ min as a result of the rapid increase in particulate density. (ii) In region I, the use of shorterλ or largerϑ leads to a more diamond-like matrix, and this overwhelms the degradation effect caused by the slight increase in particulate density. The samples thus become more insulating. In the highΦ region (region II), however, the use of shorterλ or largerϑ gives rise to higher particulate density, thereby increasing the electrical conductivity.
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    Analytical approximate equations for the resistivity and its temperature coefficient in thin polycrystalline metallic films (1977)
    Springer
    Applied physics 14 (1977), S. 221-224 
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    Keywords: 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In the usual thickness range of sputtered metallic films, analytical linearized approximate expressions of polycrystalline film resistivity and its t.c.r. are deduced from the Mayadas-Shatzkes theoretical equations. A good experimental fit is observed for Al rf sputtered metal films.
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    Influence of the semiconductor-oxide interlayer on the AC-behaviour of InSb MOS-capacitors (1978)
    Springer
    Applied physics 15 (1978), S. 79-84 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The admittance of Al-anodic oxide-InSb MOS-capacitors has been studied in the temperature range from 5K to 300K. Capacitance-voltage characteristics reproducibly show a frequency-dispersion in accumulation. By assuming an incompletely oxidized interlayer, it was possible to fit the capacitance-frequency and the conductance-frequency characteristics in accumulation by an appropriate equivalent circuit. Including the semiconductor space charge layer, an observed background of the conductance voltage characteristics can be explained. Furthermore a high frequency capacitance voltage analysis atT=5K was performed: Because of the relative low state density of the InSb conduction band in comparison to, e.g., Si, interface state analysis could be expanded into the bottom of the conduction band. A peak of interface state density around the conduction band edge was found.
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    Experimental setup for transmission channeling of MeV ions to study edge dislocations (1980)
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    Applied physics 21 (1980), S. 47-53 
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    Keywords: 29 ; 34 ; 35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental facility was built where thin metal (Ta) crystals, with known thickness, could be studied by transmission channeling of MeV ions. The details of obtaining a faint beam (1.5–3.6 MeV) of constant flux (±1%) on the target and normalization of the spectrum of forward scattered particles have been discussed with merits and demerits of various setups used. Preliminary experimental results are reported for measuring dechanneling coefficients from edge dislocations produced by cold work, using H+ ions. The H+ stopping power for Ta in various planar channels and random direction are estimated and using those, it is shown possible to use the setup for thickness measurements of thin crystal films.
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    Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions (1980)
    Springer
    Applied physics 21 (1980), S. 83-90 
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    Keywords: 68.55 ; 84.60 ; 85.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Cd1−x Zn x S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd1−x Zn x S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry and H2 as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured and possible improvements have been examined.
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    Dynamics of laser crystallization in amorphous Ge films (1981)
    Springer
    Applied physics 25 (1981), S. 91-93 
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In situ time- and space-resolved transmission measurements have been used to investigate the crystal growth during laser irradiation of amorphous Ge films. For dwell times longer than 5 ms, microcrystallization processes comparable to conventional thermal annealing are observed, whereas for irradiation times shorter than 5 ms, shell like crystallites, 20 μm long, are obtained. The results from the pulsed measurements agree with corresponding experiments performed under cw-annealing conditions.
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    Depth of origin of sputtered atoms (1981)
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    Applied physics 25 (1981), S. 307-310 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.55 ; 61.80 ; 34
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
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    Photothermal effect contribution on film quality improvement in excimer-laser induced metal CVD (1985)
    Springer
    Applied physics 37 (1985), S. 25-30 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 68.55 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract KrF excimer laser induced Cr film deposition from Cr(CO)6 has been studied. Remarkable film quality dependence on laser intensity suggested the photothermal effect contribution of intensive uv laser pulses in the CVD process. A cw Ar-ion laser light and its second harmonic light were used, to separate photochemical and photothermal effects. As a result, photoinduced surface heating has been found to be very important for obtaining good quality metallic films in KrF laser induced Cr film CVD.
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  • 46
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    Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD (1985)
    Springer
    Applied physics 38 (1985), S. 221-226 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 42.60 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A theoretical analysis of and experimental observations on a parallel incident laser-induced deposition rate are reported. Our theory predicts that the maximum deposition rate depends on the photo-traveling length, the scattering cross section of the reactant gases and their partial pressure. This result is applied to SiO2 deposition using monosilane and nitrous oxide for reactant gases, and is compared with experimental results. We show that the deposition rate of SiO2 films as a function of the incident light power and the partial pressure of reactant gases predicted by the present theory well explains our experimental results. A supply-limitation phenomenon of the reactant gases and a method of estimating deposition efficiencies are also discussed.
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    URL: http://dx.doi.org/10.1007/BF00616500
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    HREM investigation of twinning in very high dose phosphorus ion-implanted silicon (1986)
    Springer
    Applied physics 39 (1986), S. 83-90 
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    ISSN: 1432-0630
    Keywords: 61.50 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e.,Σ3 boundaries) andΣ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.
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    URL: http://dx.doi.org/10.1007/BF00616823
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    Modelling ion-assisted deposition of CeO2 films (1986)
    Springer
    Applied physics 40 (1986), S. 209-213 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 77.55 ; 68.99
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The theory presented explains quantitatively the experimentally observed increase in film density of a vapor-deposited CeO2 film when bombarded during growth with low-energy O 2 + ions. The density enhancement is expressed in terms of the yields for recoil implantation of surface atoms, ion incorporation and sputtering, which have been determined by employing a three-dimensional Monte Carlo cascade calculation. Ion-to-vapor flux ratios between 0 and 1.4 and O+ ion energies between 25 and 600 eV have been examined. The density shows an almost linear increase with the ratio of ion-to-vapor fluxes. An optimum O+ ion energy for densification is found at about 200 eV which is in agreement with experiment.
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    URL: http://dx.doi.org/10.1007/BF00616596
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  • 49
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    Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si (1987)
    Springer
    Applied physics 42 (1987), S. 35-39 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.
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    URL: http://dx.doi.org/10.1007/BF00618156
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  • 50
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    Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1,2,3 grown by molecular beam epitaxy (1987)
    Springer
    Applied physics 43 (1987), S. 75-79 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1, 2, and 3 were grown by molecular beam epitaxy and characterized by x-ray diffraction and photoluminescence measurements. The appearance of distinct satellite peaks around the Bragg reflections demonstrate the formation of high-quality layered crystals. The observed luminescence shows a maximum at 2.033 eV form = 3, and the emission energy decreases form = 2 andm = 1 as well as for them = 4 superlattice. This result for the monolayer superlattice is in good agreement with recent theoretical calculations, and it shows that the (AlAs)1(GaAs)1 superlattice represents a new artificial semiconductor material with novel electronic properties.
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    URL: http://dx.doi.org/10.1007/BF00615210
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    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
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    On the formation of periodic structures on solid surfaces (1985)
    Springer
    Applied physics 36 (1985), S. 205-207 
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    ISSN: 1432-0630
    Keywords: 42.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A model is proposed to explain the formation of periodic structures produced on solid surfaces by laser radiation. The model gives rise to a system of two linear integrodifferential equations with difference kernels for temperature correction due to the specific absorption of electromagnetic energy at a certain solid surface profile and at a surface profile formed due to heat expansion resulting from temperature correction. The solution of this system reveals, that, first, periodic structures are formed as a result of the propagation of “periodic” profiles generated from a certain original non-periodic profile over the body surface. Second, the amplitudes of these waves grow with time only for a laser density exceeding certain critical value, i.e. the formation of periodic structures is a threshold effect relative to the laser density.
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    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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    Growth kinetics of Si-molecular beam epitaxy (1982)
    Springer
    Applied physics 28 (1982), S. 129-135 
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    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Growth mode, surface morphology, crystal perfection and growth rate of siliconmolecular beam epitaxy films were observed as function of temperature (450°–950°C), silicon flux density (8×1014−8×1015cm2/s) and surface orientation (111, 110, 100). Within the varied parameters growth proceeds by the two-dimensional growth mode via the lateral motion of atomic steps originating from the slight misorientation of commercially available substrates (typically 0.25°). Single crystalline films with high lattice perfection and smooth surfaces result from this growth mode. The growth rate — linearly dependent on Si-flux density and independant of temperature and orientation — indicates a condensation coefficient near unity. An atomic step flow model on the basis of the Burton-Cabrera-Frank theory explains this behaviour by mobile adatoms with low activation energy of diffusion.
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    Formation of dielectric and semiconductor thin films by laser-assisted evaporation (1988)
    Springer
    Applied physics 47 (1988), S. 271-284 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-assisted evaporation is an emerging novel thin film deposition technique. It has been successfully applied to a variety of dielectric and semiconductor materials. Characteristics of the evaporation process and of the evaporants, resulting from the interaction of high power radiation with matter, often result in better structural and chemical properties of the films than can be obtained by conventional evaporative techniques. Congruent evaporation, the presence of energetic vapor species, and precise rate control are important advantageous features of this technique. The physics of laser-induced evaporation and plasma formation, some engineering aspects, and properties of dielectric and semiconductor thin films deposited by this technique are discussed in this review.
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    Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser (1989)
    Springer
    Applied physics 48 (1989), S. 503-507 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO2/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm2 were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm2 energy density. On the substrate with surface overlayers lower fluence (1 J/cm2) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 Ω/□ to 2–3 Ω/□. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO2/c-Si structure is shown to be a consequence of the SiO2 underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.
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    CW laser-assisted oxidation of thin Cd, In, Sn, and Zn films in air (1990)
    Springer
    Applied physics 50 (1990), S. 311-315 
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    ISSN: 1432-0630
    Keywords: 81.60 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Cd, In, Sn, and Zn are deposited onto glass and irradiated in air by means of a cw-Ar+ laser beam. The films are oxidized. The variations of the diameter of the oxidized zones are measured as a function of time and laser beam power, P. The temperature is measured by an interferometric method. It is shown that oxidation proceeds rapidly at some critical temperature, independent of P over some range of P, in the cases of Cd, In, and Zn. These critical temperatures correspond to the melting temperatures of Cd and In. No relation to any specific temperature of the Zn-O phase diagram is found. Feedback effects are also discussed.
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    Synthesis of chromium silicide with laser pulses (1990)
    Springer
    Applied physics 50 (1990), S. 411-415 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 79.20D ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.
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    Preparation and characterization of molybdenum diselenide thin films (1990)
    Springer
    Applied physics 51 (1990), S. 155-159 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60F
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract MoSe2 layers, synthesized by annealing a molybdenum foil under selenium pressure, have been investigated by scanning electron microscopy, X-ray analysis, electron spectroscopy (XPS) and electrical resistance measurements. It has been found that stoichiometric layers are obtained after appropriate processing. The films crystallize in the hexagonal structure. The crystallites develop preferentially along the c axis. The binding energies deduced from the XPS lines were found to be in good agreement with those of the reference powder. The electrical resistance is governed by hopping conduction in the low temperature range (80–250 K) and by grain boundary scattering mechanisms at higher temperatures.
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    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 343-351 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on the ion-beam mixing processes of Sb/Ni marker layers and bilayers under the irradiation of ions ranging from He to Pb, at 80 K and at room temperature. The concentration profiles are obtained by Rutherford backscattering spectroscopy with 900 keV α-particles. At 80 K, the bilayer mixing rates cannot be reproduced by purely ballistic mixing; the essentially linear scaling of the bilayer mixing rate with the energy F D deposited at the interface points to local spike formation. A transition to global spike formation seems to be visible for the Pb-irradiations. Additional mixing effects at 300 K are due to radiation enhanced diffusion and scale with √F D. The marker mixing rates at 80 K are reproduced by the ballistic mixing approach, but are equally well described by local spike models. High fluence Xe-irradiations of Sb/Ni bilayers lead to intermetallic phases in the interface region as verified by transmission electron microscopy.
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    URL: http://dx.doi.org/10.1007/BF00332288
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    Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface (1993)
    Springer
    Applied physics 57 (1993), S. 415-425 
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    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 469-473 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nickel-antimony intermetallic compounds of different stoichiometries were studied by means of perturbed angular correlation (PAC) spectroscopy. The hyperfine interaction parameters for 111Cd probes in the crystal lattices of NiSb, Ni5Sb2, Ni3Sb and NiSb2 were determined. The results are discussed in the light of crystallographic data.
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    Entropy-controlled site occupation of CO adsorbed on Ni(100) (1993)
    Springer
    Applied physics 57 (1993), S. 499-505 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for Θ=0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm−1 which cannot be explained at present.
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    Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy (1994)
    Springer
    Applied physics 58 (1994), S. 77-80 
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    ISSN: 1432-0630
    Keywords: 07.65 ; 07.80 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structural and compositional properties of undoped SIPOS thin films have been studied by spectroscopic ellipsometry and transmission electron microscopy. It is shown that in most cases the former method provides fast and reliable results. The growth rate and crystallinity of SIPOS layers are studied as a function of N2O concentration in the gas phase and annealing temperature.
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    Preparation of ultrathin metal-oxide layers by means of Langmuir-Blodgett films (1994)
    Springer
    Applied physics 58 (1994), S. 557-562 
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    ISSN: 1432-0630
    Keywords: 68.55 ; Gi
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Langmuir-Blodgett (LB) films of fatty acid salts (Y-stearate, Y-arachidate, Cu-arachidate, Ba-stearate) were thermally oxidized. As a result one obtains ultrathin (a few Å thick) metal-oxide films at the substrate. The surface of the metal-oxide films was found to be rather inhomogeneous. Y and Cu ions remain quantitatively at the substrate despite the heating procedure. A linear dependence between area density of the metal ions in the oxidized films and the number of monolayers of the LB films was observed. The preparation of a mixed metal-oxide film containing Y, Ba, Cu with a given stoichiometry was found to be difficult due to the effect of counter ion exchange. The samples were investigated by means of plasma-desorption and spontaneous-desorption mass spectrometry, by Rutherford back-scattering and electron microscopy.
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    Modeling of gas-phase processes in laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser (1993)
    Springer
    Applied physics 56 (1993), S. 138-146 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 68.55 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced chemical vapor deposition from Cr(CO)6 with an excimer laser has been modeled and simulated to investigate the kinetics and mechanisms of the deposition. The model concerns gas-phase processes including photolysis of Cr(CO)6, transportation of photofragments to the substrate surface, and elimination of photofragments through chemical reactions during transportation. The photofragments are eliminated through the reforming to Cr(CO)6 that is divided into the two stages: stabilization of the photofragments in excited states by collisions with buffer gases (CO, Ar) and recombination of the photofragments in the ground state with CO. The simulation shows that the deposition rate without additional buffer gases is of the same order as the experimental rate and that deposition rates in the presence of additional CO and Ar agree qualitatively with experimental results. This suggests that the supply of Cr species to the substrate surface is mainly controlled by the gas-phase processes where the chemical reactions eliminating photofragments play an important role. Applications of the model for the deposition under other conditions are discussed.
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    The growth of crystalline vapor deposited carbon-60 thin films (1993)
    Springer
    Applied physics 56 (1993), S. 185-192 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films (25-2500 Å) of C60 molecules have been deposited on both (001) NaCl and mica substrates at varying temperatures by resistive evaporation. Both electron diffraction and high resolution microscopy have been used to assess the degree of crystallinity, the orientational ordering and the nature of the defects present in these face-centered-cubic films. For NaCl, optimum conditions yielded polycrystalline films with a tendency towards a 〈110〉 orientation, while for mica, extended single crystal films have been fabricated which exhibit a 〈111〉 direction normal to the film surface.
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    Laser and thermal processing for Ti:LiNbO3 waveguide fabrication (1993)
    Springer
    Applied physics 56 (1993), S. 349-351 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ti diffusion into LiNbO3 single crystal was studied as a result of Ruby laser irradiation of a metallic Ti thin film covering the crystal surface and subsequent thermal processing in a furnace. Different regimes of irradiation and heating were used. SIMS analysis was employed for investigation of the treatment. The combined method used proved to be able to form waveguides of 3–4 μm thickness.
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    Regrowth-process study of amorphous BF 2 + ion-implanted silicon layers through spectroscopic ellipsometry (1995)
    Springer
    Applied physics 60 (1995), S. 325-332 
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    ISSN: 1432-0630
    Keywords: 07.60 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The recrystallization kinetics of BF 2 + ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy, dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution.
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    URL: http://dx.doi.org/10.1007/BF01538413
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    Structural evolution during lithiation of sputtered V2O5 films (1995)
    Springer
    Applied physics 60 (1995), S. 521-522 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 68.55 ; 85.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Li x VO2.5 films were made by reactive dc magnetron sputtering followed by galvanostatic treatment in LiClO4. Structural evolution forx increasing from zero to ≈ 1, studied by X-ray diffraction, was consistent with a VO5-based layer configuration with progressively increasing layer separation and puckering. Two-phase behavior was found forx〉1.
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    A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE (1995)
    Springer
    Applied physics 61 (1995), S. 71-74 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.
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    Shifting of the thermal properties of amorphous germanium films upon relaxation and crystallization (1995)
    Springer
    Applied physics 61 (1995), S. 141-147 
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    ISSN: 1432-0630
    Keywords: 65.00 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The modification of the thermal conductivity and melting temperature of unrelaxed amorphous Ge films on Si substrates upon laser-induced relaxation and crystallization is presented. Real-Time Reflectivity (RTR) measurements are used to determine experimentally both the melting threshold and the melt durations, and the finite element method is used to simulate the laser-induced heat-flow process. A thermal conductivity ofk=0.010 W dem K is determined for the unrelaxed material by fitting the experimental melting thresholds of unrelaxed films of different thicknesses. A similar procedure applied to the amorphous relaxed and crystallized materials lead to a shift to higher values of both the thermal conductivity and the melting temperature. In order to achieve a good fit of the experimental melt durations, it was necessary to assume a large degree of undercooling prior to solidification. The role of undercooling in the solidification process is finally discussed in terms of its dependence on the faser energy density and the high thermal conductivity of the substrate.
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    Fluorescence interference-contrast microscopy on oxidized silicon using a monomolecular dye layer (1996)
    Springer
    Applied physics 63 (1996), S. 207-216 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 68.55 ; 78.65
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A silicon chip is covered by a monomolecular film of a fluorescence dye with silicon dioxide used as a spacer. The fluorescence depends on the distance of the dye from the silicon. The modulation of the intensity is described quantitatively by an optical theory which accounts for interference of the exciting light and of the emitted light. The effect is used to obtain a microscopic picture of the surface profile with a precision of a few Angströms. The perspectives for an application in wet systems such as neuron-silicon junctions and lipid membranes on silicon are pointed out.
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    Two groups of misfit dislocations in GaAs on Si (1996)
    Springer
    Applied physics 63 (1996), S. 359-370 
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    ISSN: 1432-0630
    Keywords: 61.14 ; 61.70 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) before and after annealing as a function of film thicknesses and observation directions between two orthogonal 〈110〉 directions. Two groups of misfit dislocations are characterized at the interface regions between GaAs and Si by analyzing whether their extra half planes exist in the film or the substrate side. Group I misfit dislocations due to stress caused by a lattice misfit between GaAs and Si consist of partial dislocations and 60° and 90° complete dislocations in an as-grown state. With an increase in the film thickness, partial dislocations decrease and complete dislocations increase. After annealing, partial dislocations almost completely disappear and 90° perfect dislocations are predominantly observed. Group II misfit dislocations due to thermal-expansion misfit-induced stress are all 60°-type complete dislocations regardless of film thicknesses and annealing treatment.
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    Laser-induced structural relaxation in Sb-rich SbGe films (1996)
    Springer
    Applied physics 62 (1996), S. 559-564 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Structural relaxation processes are induced by pulsed laser irradiation in amorphous SbGe thin films with compositions richer in Sb than the eutectics. These processes are studied by means of real-time optical measurements and transmission electron microscopy analytical techniques. The influence of the laser pulse length and the film composition is analysed. The results show that the relaxed amorphous material exhibits different optical properties, density and lower-energy density threshold for crystallisation. A qualitative change in the relaxation mechanism is observed when the composition of the films is slightly changed.
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    Step-like growth of Bi2Sr2CaCu2O8 films on off axis oriented (001) SrTiO3 (1996)
    Springer
    Applied physics 63 (1996), S. 427-429 
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    ISSN: 1432-0630
    Keywords: 81.152 ; 68.55 ; 74.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-quality Bi2Sr2CaCu2O8 (BSCCO) films were grown by means of pulsed-laser deposition on 10° off-axis oriented (001) SrTiO3 substrates. The films exhibit a step-like morphology and they are properly oriented along the (001) direction. Their normal-state resistivity measured along the tilt (off-axis (100) direction of the substrate) was, typically, 260 times higher than that along the (010) direction. Such films reveal a transverse Seebeck-effect which significantly exceeds that observed with YBa2Cu3O7 (YBCO).
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    Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon (1978)
    Springer
    Applied physics 15 (1978), S. 73-78 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
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    Notes: Abstract High dose implantations (1016 ions/cm2) of antimony in silicon result in concentrations far above the solid solubility of antimony in silicon. Rutherford backscattering was used to study the behaviour of damage and antimony concentration profiles for 〈100〉 and 〈111〉 substrates. The measurements were performed for various annealing treatments, implantation temperatures and implantation energies. A crystal orientation dependent outdiffusion of antimony towards the surface, a highly supersaturated phase of substitutional antimony at 600°C and a strong reverse annealing effect at higher temperatures were found.
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    The nature of the passivating oxide layer on iron powder (1978)
    Springer
    Applied physics 15 (1978), S. 163-166 
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    ISSN: 1432-0630
    Keywords: 68.20 ; 68.55 ; 76 ; 75.30
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    Notes: Abstract Passivated iron powder is studied by Mössbauer spectroscopy, x-ray diffraction and magnetization measurements in order to elucidate the nature of the oxide layer. A gradual transition from FeO at the metal/oxide interface via Fe3O4 to γ-Fe2O3 at the outside agrees with the experimental results and with the available data on chemical composition, calorimetry, in fared spectroscopy and chemical stability.
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    Dynamics of film growth of GaAs by MBE from Rheed observations (1983)
    Springer
    Applied physics 31 (1983), S. 1-8 
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    Keywords: 68.55
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    Notes: Abstract Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga x Al1−x As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) −2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps.
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    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
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    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
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    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
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    ISSN: 1432-0630
    Keywords: 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
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    Vanadium oxidation as a result of cw CO2 laser irradiation in atmospheric air (1984)
    Springer
    Applied physics 35 (1984), S. 103-108 
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    Keywords: 42.60 ; 68.55 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract New results are reported concerning the vanadium oxidation by cw CO2 laser irradiation in air at atmospheric pressure. Particular emphasis is paid both to the initial stage and the development of the oxidation process under the action of the laser radiation. Some aspects are finally discussed concerning the quantitative theoretical interpretation of the experimentally recorded data.
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    Growth of molybdenum carbide particles from an amorphous phase induced by ion bombardment (1985)
    Springer
    Applied physics 38 (1985), S. 275-279 
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    Keywords: 68.55 ; 82.65
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    Notes: Abstract Transmission electron microscopy and Auger electron spectroscopy revealed that the Ar+-ion bombardment of a carbon-containing molybdenum film with an amorphous structure led to the growth of carbide particles smaller than ∼30nm in diameter. The particles possessed an fcc structure and were distributed like islands in the film. Electron diffraction analysis identified them withβ-MoC0.75, a high-temperature phase of MoC0.75. Presumably, the heating effect of the ion beam was responsible for forming and stabilizing the particles.
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    Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures (1988)
    Springer
    Applied physics 45 (1988), S. 233-244 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 73.60
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    Notes: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
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    Laser synthesis of metal silicides (1988)
    Springer
    Applied physics 45 (1988), S. 325-335 
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    Keywords: 68.55 ; 79.20D ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The relevant results obtained in the field of laser synthesis of metal silicides are reviewed. Particular emphasis is given to the work using a pulsed laser in the nanosecond regime and to the results obtained in our laboratory. Formation of stable and metastable compounds, their structure and the surface morphology of the irradiated materials are discussed. The reaction kinetics is investigated through a comparison of the experimental results with the heat flow and temperature calculations.
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    A simple technique to deposit molybdenum thin films (1982)
    Springer
    Applied physics 28 (1982), S. 125-128 
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    Keywords: 52 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple technique is proposed for metallizing nonconductive objects. The technique, which is based on a plasma-induced dissociation of Mo(CO)6 molecules, is inexpensive with no sophisticated instrument needed, and allows us to deposit fine grained, adherent thin films of molybdenum on nonrefractory substrates. It is believed that the technique possesses a variety of potential applications in laboratory works.
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    High rate primary ion beam deposition of a-Si:H films (1988)
    Springer
    Applied physics 47 (1988), S. 193-197 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 72.40 ; 81.15
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    Notes: Abstract Hydrogenated amorphous silicon films have been prepared by primary ion beam deposition with a new electrodeless rf ion source. The design of the ion source is described. The composition of the a-Si:H films has been determined by Rutherford backscattering, and the photoconductivity by the constant photocurrent method (CPM). The best a-Si:H films show photoconductivities of 5×10−5 (Ω cm)−1. The deposition rates were between 0.7 and 1.2 nm s−1.
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    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
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    Keywords: 68.55 ; 73.60 ; 77.55
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    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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    Magnetic properties of thin epitaxial films investigated by spin-polarized photoemission (1989)
    Springer
    Applied physics 49 (1989), S. 449-458 
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    ISSN: 1432-0630
    Keywords: 75.70 ; 79.60 ; 75.60 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface sensitivity of the spin-polarized photoemission experiment was exploited to study two-dimensional magnetism. The magnetization of thin films of Fe, Co, and V in the monolayer (ML) range, grown on Cu(001) and Ag(001) single crystals, was measured as a function of perpendicularly applied field and temperature. Bcc Fe films and fcc Fe and Co films exhibit ferromagnetism down to the single monolayer range, while no evidence for ferromagnetism is found for V on Ag(001). All Co films are magnetized in plane and have a Curie temperature far above room temperature. A thickness dependence of the anisotropy and Curie temperature is observed for the two phases of Fe. Remanent magnetization perpendicular to the surface is found at 30 K for fcc Fe films thicker than 2 ML and for bcc Fe between 3 and 4 ML. The magnetic effects caused by coating and by interdiffusion are discussed in the light of measurements of Cu/Fe/Cu sandwiches and of overlayers obtained by simultaneous evaporation of Fe and Cu. The fcc Fe films are shown to be suitable for thermomagnetic writing.
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    Optical constants of thin CoSi2 films on silicon (1990)
    Springer
    Applied physics 50 (1990), S. 177-181 
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    Keywords: 68.55 ; 73.40 ; 78.65
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    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
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    Models for thermal dissociation of silane on a polysilicon surface (1990)
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    Applied physics 50 (1990), S. 215-220 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343420
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  • 93
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of optimized thin gold films as top layer of MIS solar cells (1992)
    Springer
    Applied physics 54 (1992), S. 204-207 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 78.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical spectral response between 340–860 nm and electrical conductivity measurements were made on thermally evaporated gold films in the thickness range 50–130 Å in order to identify optimal properties for their use as the top layer of MIS solar cells. Films of lower evaporation rate and thickness range 70–100 Å were found to have high transmittance and low reflectance, which is desirable for the above purpose. Films thinner than 70 Å had poor electrical conductivity and thicker than 100 Å had poor solar transmittance, hence were rejected. Improved transmittance and conductivity were obtained upon annealing the film at 250°C for about two hours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323913
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  • 94
    Electronic Resource
    Electronic Resource
    Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs (1992)
    Springer
    Applied physics 54 (1992), S. 284-287 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time insulating epitaxial SrF2 films on (100) GaAs substrates have been grown by thermal deposition followed by in situ annealing process. Structural properties of SrF2 films examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicate a very good crystalline quality. It is observed from the X-ray analysis that SrF2 layers thinner than 100 nm suffer two dimensional compressive stress due to the lattice misfit while those thicker than 100 nm suffer two dimensional tensile stress due to the difference in the thermal expansion coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323851
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  • 95
    Electronic Resource
    Electronic Resource
    Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air (1991)
    Springer
    Applied physics 52 (1991), S. 192-196 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.40 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Sb, Se and Sb2Se3 are deposited onto glass and irradiated by a cw-Ar+ laser beam. The kinetics of crystallization and oxidation are traced via the time dependence of optical reflectivity and temperature, T, of the irradiated zone. For Sb2Se3, transformations start abruptly when T attains a critical value, T c, independently of the laser beam power. These T c values are comparable to the ones observed under furnace annealing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324417
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  • 96
    Electronic Resource
    Electronic Resource
    Optical gate realization with thin CdS films (1991)
    Springer
    Applied physics 53 (1991), S. 539-546 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 P ; 42.65 G ; 68.55 ; 19.08 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spray deposited thin (6 μm) CdS film laser induced optical device (LIOD) was studied experimentally and theoretically. The all optical bistable (all-OB) and the hybrid bistable (HB) features at 210 K were investigated. It is shown for the first time that the observation of equal contrasted all-OB and HB loops is possible in thin CdS films. The slope of the all-OB loops were calculated with a new theoretical model which is established on the thermal enhanced shift of the absorption edge and the transmitted light equilibrium condition. A good agreement with the experiments is found. Furthermore, it is pointed out that the electron life time determines the fashion and the contrast of the HB loops. In this context the proof is furnished that the maximal possible HB loops is observed. Finally, the influence of Joule's heat on OB and HB is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331543
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  • 97
    Electronic Resource
    Electronic Resource
    MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992)
    Springer
    Applied physics 54 (1992), S. 103-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40T ; 85.30D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348140
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  • 98
    Electronic Resource
    Electronic Resource
    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323848
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  • 99
    Electronic Resource
    Electronic Resource
    Effect of oxygen segregation on the surface structure of single-crystalline niobium films on sapphire (1992)
    Springer
    Applied physics 54 (1992), S. 350-354 
    Details
    ISSN: 1432-0630
    Keywords: 61.14.H ; 68.20 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single-crystalline Nb films are grown on (1120) oriented sapphire substrates by electron-beam evaporation in ultra-high vacuum. The films are studied in-situ by RHEED and Auger analysis. At a substrate temperature T S=750° C the RHEED pattern shows a smooth growth of bcc-Nb in the [110] direction. In addition to the fundamental streaks, we observe superlattice streaks of fractional order in several azimuthal directions. The reciprocal lattice of the surface is determined. The basic vectors of the superlattice in real space are given by b 1=2a 1, b 2=−a 1+3a 2 where a 1 and a 2 are the basic vectors of the Nb (110) surface. Auger analysis shows that the surface of these films is contaminated with oxygen. Therefore, the superstructure is attributed to a modified surface structure due to segregated oxygen, possibly having diffused from the sapphire to the film surface. The superstructure dissappears during further evaporation of Nb at T S〈450° C with a concomitant decrease of the oxygen signal. Nb films on sapphire with a clean, oxygen-free surface can only be prepared at lower temperatures in an island-growth mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324200
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  • 100
    Electronic Resource
    Electronic Resource
    Improvement of corrosion resistance of carbon steel using chemical vapor deposition from Cr(CO)6 with an ArF excimer laser (1992)
    Springer
    Applied physics 55 (1992), S. 207-212 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 81.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Corrosion resistance of carbon steel coated with thin film deposited from Cr(CO)6 using an ArF excimer laser (193 nm) has been evaluated by an electrochemical method as a function of laser beam intensity. The carbon steel coated with the film formed at higher beam intensity shows higher corrosion resistance. Microstructure, composition, and thickness of the films have also been investigated. SEM micrographs show that the films consist of small grains which decrease in size with increasing beam intensity. Auger electron spectroscopy (AES) combined with Ar+ beam sputtering reveals that the films deposited at higher beam intensity give higher chromium content, and that the thickness at a fixed total irradiation energy increases up to the intensity of 10 MW cm−2, falling above this intensity. In addition, the change of film thickness by addition of buffer gases (Ar, CO, and H2O) has been investigated. The thickness is 10 times smaller under the addition of H2O, and twice smaller under the addition of Ar or CO than without the addition of gases. A deposition mechanism based on photolysis of Cr(CO)6 in the gas phase is proposed related to the experimental data after the discussion of several possible mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334225
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