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  • Elsevier  (249,080)
  • American Institute of Physics (AIP)  (31,708)
  • 1985-1989  (280,788)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Plasma production by laser-driven explosively heated thin metal films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 827-829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method of producing a relatively large volume of metal vapor for laser-plasma interaction studies is described. The method uses the explosive removal of a thin metal film from a glass substrate with a low-intensity laser pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334733
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  • 2
    Electronic Resource
    Electronic Resource
    An example of energy straggling in an ion accelerator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 819-821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We solve the Poisson–Vlasov equations for volume-produced ions, fast neutrals, and backstreaming electrons in a Mirror Fusion Test Facility 80-keV preprototype neutral beam source. Neutral pressure distributions are estimated from known gas feed rates and calculated accelerator column conductance, and are calibrated by comparing measured and calculated electron backstreaming power (computed by solving another Vlasov equation). The depletion of atomic yield from these volume processes is computed for sources in which the atomic yield is 100% in the extraction region. The energy distribution of neutrals and ions is also established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334731
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  • 3
    Electronic Resource
    Electronic Resource
    Luminescence study of rapid lamp annealing of Si-implanted InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 531-536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence of Si-implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of band-to-band room-temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of Si implantation and good annealing were observed in the low-temperature spectra. It was found that the best results could be obtained only in the case of hot implantation and lamp annealing in regimes close to the melting point of the InP, whereas room-temperature implantation and oven annealing were much less effective.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334787
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  • 4
    Electronic Resource
    Electronic Resource
    Numerical analysis for radiation-resistant GaAs heteroface solar cell structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 537-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies and numerical analyses are carried out to optimize A1GaAs-GaAs heteroface solar cell structures. Carrier removal rate and damage constant for diffusion length in n-GaAs due to 1-MeV electron irradiation are found to be larger than those in p-GaAs. These results are explained by taking into account deep-level traps associated with radiation-induced defects. Numerical analysis shows that n++-n+-p heteroface cell structure is relatively radiation resistant in a shallow junction solar cell (below 0.2 μm) with a substrate carrier concentration above 3×1015cm−3. In the p++-p+-n heteroface solar cell, optimum junction depth and substrate carrier concentration are 0.2–0.3 μm and 2–5×1015 cm−3, while those in the n++-n+-p heteroface solar cell are less than 0.1 μm and 3–10×1015 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334788
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  • 5
    Electronic Resource
    Electronic Resource
    Effective gettering of gold in silicon at 900 °C by low-current corona discharge (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 554-558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of microampere level corona generated currents at elevated temperatures in an argon atmosphere was found to indicate a rapid segregation of dissolved Au impurities out of the bulk of intentionally Au-doped silicon wafers into the near surface regions on both sides of the wafers. Complete removal of the Au occurred in less than 15 min with a current of 5 μA at 900 °C. A "kick-out'' mechanism due to the generation of Si interstitials is considered as a possible explanation for these results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334736
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  • 6
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous Zr2Pd and Zr3Rh alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 545-553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability behavior of the metallic glasses a-Zr2Pd and a-Zr3Rh was studied by means of x-ray diffraction, differential scanning calorimetry (DSC), and isothermal annealing. While several a-Zr2Pd alloys each exhibit two exothermic peaks during the DSC heating sequence, three different types of exothermic behavior have been observed for a-Zr3Rh alloys with nominally identical stoichiometries. These variations in DSC behavior are probably related to different conditions during the rapid quenching procedures. The three types of differential scanning calorimeter behavior shown by a-Zr3Rh alloys include (1) two peaks of about 715 K and 790 K, (2) a single large peak at about 730 K, and (3) a strong peak at about 725 K with a much weaker peak at about 850 K. The a-Zr3Rh alloys of type (1) crystallize to form a tetragonal lattice that is a newly identified Zr3Rh phase of the D0e structure type. The a-Zr3Rh alloys of types (2) and (3) crystallize first to form a face-centered cubic lattice which appears to be an E93-type structure. Both the D0e and E93 phases are metastable and ultimately anneal to the Zr2Rh phase with the tetragonal C16-type structure. The formation of the Zr2Rh phases with either the C16 or E93 structure is accompanied by α-Zr. The a-Zr2Pd alloys undergo a two-step crystallization with the initial formation of a disordered body-centered-cubic phase followed by the tetragonal Zr2Pd phase with the C11b-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334735
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxy and line tension (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 559-563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The line tension concept is used to generalize the classical theory of heterogeneous nucleation. The theory is applied to study the impingement flux-temperature diagram of nucleation. The epitaxial nucleation zone at the diagram can be drastically modified depending on the sign of the line tension. Line tension also gives place to a new zone of no nucleation due to spreading effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334737
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  • 8
    Electronic Resource
    Electronic Resource
    Accurate, short series approximations to Fermi–Dirac integrals of order −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5271-5274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short series approximations based on the classical series expansions of the Fermi-Dirac integrals Fj(x) are presented for the orders −1/2, 1/2, 1, 3/2, 2, 5/2, 3, and 7/2. The approximations are accurate to better than 1 part in 105 over the range − ∞ 〈x〈 ∞ .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335269
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  • 9
    Electronic Resource
    Electronic Resource
    Deep levels introduced into silicon during hydrogen plasma annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5275-5278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the introduction of deep energy levels into silicon following a hydrogen plasma anneal at 300 °C for 3 h. The wafers were heat treated prior to the hydrogen anneal to cause oxygen to precipitate using a three-cycle high-low-high anneal. The deep level impurity concentrations generally exhibited a decreasing density into the wafer, indicative of damage originating from the surface. These findings are in contrast to other reported hydrogen plasma anneal results which generally show a reduction of deep level concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335270
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  • 10
    Electronic Resource
    Electronic Resource
    Measurements of deep levels in high-purity molecular beam epitaxial GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5287-5289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant capacitance deep-level transient spectroscopy measurements are performed on molecular beam epitaxially grown GaAs layers with net carrier concentrations of 3.3–6.5×1014 cm−3. Four trap levels are detected, three of which are usually detected in molecular beam epitaxial layers, and the fourth, a very shallow trap at 30 meV, has not been previously reported. Determination of the concentrations for this new level dispute the accepted interpretation of Hall measurements near and above room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334843
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