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  • 1
    Electronic Resource
    Electronic Resource
    Annealing of Cd-implanted GaAs: Defect removal, lattice site occupation, and electrical activation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4248-4256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic investigation of the behavior of Cd-implanted GaAs after rapid thermal annealing is presented. The use of various experimental techniques gives a detailed picture regarding the annealing process in the low-dose regime (1012 and 1013 cm−2) on a microscopic as well as on a macroscopic scale. Perturbed angular correlation experiments, using the radioactive probe 111mCd, yield information on the immediate environment of the Cd implant on an atomic scale. Rutherford backscattering channeling and photoluminescence spectroscopy give complementary information concerning the overall damage level in the implanted layer, Hall measurements are used to determine the degree of electrical activation of the implanted Cd acceptors. The outdiffusion of the implanted radioactive Cd atoms is also investigated. The removal of defects in the next-nearest neighborhood of the Cd atoms takes place after annealing at 700 K and is accompanied by a general recovering of the crystal lattice. Between 600 and 900 K more distant defects are removed. The observed outdiffusion of about one-third of the dopant atoms after annealing above 600 K is discussed in context with their partial incorporation in extended defects. Although already at 700 K, 80% of the implanted Cd atoms are on substitutional lattice sites with no defects in their immediate environment, an annealing temperature in excess of 1000 K is necessary to obtain electrical activation of the implants. It is concluded that compensating defects, present in ion-implanted GaAs, are the reason for the significantly higher temperature required for electrical activation as compared to the incorporation of the dopants on defect-free, substitutional lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354039
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2739-2742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on 113In+ and 11B+ implanted Cd0.23Hg0.77Te. Up to the highest doses of 1×1013 cm−2 for In and 1×1014 cm−2 for B, respectively, Raman spectroscopy indicates a full recovery of the crystalline perfection for annealing temperatures around 320 °C and annealing times ≥10 min. This recovery is accompanied by an electrical activation of the implants. Control experiments have been carried out to prove that the electrical activity is not due to residual lattice damage and that the immersion in the Hg bath by itself has no effect on the Raman spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353047
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  • 3
    Electronic Resource
    Electronic Resource
    Conductivity in insulators due to implantation of conducting species (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3841-3845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of the surface conductivity of insulators can be accomplished by high dose ion implantation of conductive species. The use of C+ as the implant species is particularly interesting because C can either form electrically insulating sp3 bonds or electrically conducting sp2 bonds. In the present work, fused quartz plates have been irradiated with 100 keV C+ ions to doses up to 1×1017 ions/cm2 at room temperature and at 200 °C. The ion beam induced conductivity was monitored in situ and was found to increase by up to 8 orders of magnitude for the ion dose range studied. Xe implantations over a similar range did not induce any changes in the conductivity showing that the increase in conductivity is caused by the presence of the C in the fused quartz matrix and not by damage. The conductivity, σ, is found to vary with dose D as log σ∝D−1/3 over a wide dose range, strongly supporting a hopping model for the conduction mechanism. The dependence of the conductivity on implantation temperature and on post-implantation annealing sheds light on the clustering of the C implants. The temperature dependence of the conductivity for the highest doses employed (1×1017 C+/cm2) can be described very well by ln σ∝T. This is a peculiar dependence which does not comply with any of the standard models for conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352893
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of nitrogen-doped amorphous hydrogenated carbon films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4958-4962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen-containing hydrogenated amorphous carbon (a-C:H(N)) films are grown from a dc plasma of a N2+C6H6 gas mixture. By varying the N2 fraction in this mixture films with different amounts of N are produced. The actual amount of nitrogen in the a-C:H(N) films is determined by nuclear reaction analysis and by Auger electron spectroscopy profiling. The nitrogen concentration in the films grows exponentially with nitrogen content in the gas mixture reaching concentrations as high as 10 at.% for the films grown from a N2-rich gas mixture (N2/(N2+C6H6)=0.75). The electrical and structural properties of the N2-doped films are studied by performing electrical conductivity, thermopower (TP), optical absorption, and electron-paramagnetic resonance measurements. Films with low (〈1 at.%) nitrogen content exhibit fairly high resistivities, have an optical gap of 1 eV, are rich with dangling bonds (5×1020 cm−3) and their thermopower is positive and in the mV/K regime, indicating conductivity in the valence band tail. However, with increased N doping, the resistivity decreases and the optical band gap shrinks and reached zero for the highest doped film. The TPs for films containing more than 1 at.% are in the μV/K range, indicating hopping conductivity around the Fermi level. The results of all measurements are consistent with the model of Robertson for the electrical structure of amorphous hydrogenated carbon and for the proposed doping mechanism in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349043
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  • 5
    Electronic Resource
    Electronic Resource
    Luminescence study of rapid lamp annealing of Si-implanted InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 531-536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence of Si-implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of band-to-band room-temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of Si implantation and good annealing were observed in the low-temperature spectra. It was found that the best results could be obtained only in the case of hot implantation and lamp annealing in regimes close to the melting point of the InP, whereas room-temperature implantation and oven annealing were much less effective.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334787
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  • 6
    Electronic Resource
    Electronic Resource
    Ion beam induced conductivity in chemically vapor deposited diamond films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2187-2189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 °C. The dose dependence of the electrical conductivity measured in situ exhibited complicated, nonmonotonic behavior. High doses were found to induce an increase of up to ten orders of magnitude in the electrical conductivity of the film. The dose dependence of the conductivity for the CVD films was found to be very similar to that measured for natural, type IIa, single-crystal diamonds irradiated under identical conditions. This result suggests that the conduction mechanism in ion beam irradiated polycrystalline CVD diamond films is not dominated by grain boundaries and graphitic impurities as one might have expected, but rather is determined by the intrinsic properties of diamond itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103931
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  • 7
    Electronic Resource
    Electronic Resource
    Quantitative electron channeling measurements for high sensitivity surface analysis (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2098-2100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high sensitivity to low dose implantation damage has been achieved by a novel quantitative analysis of electron channeling patterns (ECPs). An algorithm, based on the statistical analysis of the two-dimensional ECP pictures obtained from a scanning electron microscope, has been developed. The analysis yields a single number (the variance), analogous to the quantity χmin deduced from ion channeling measurements, which characterizes the surface crystallinity. Measurements performed on implanted silicon (point defects) and CdTe (extended defects) crystals show that electron channeling is approximately two orders of magnitude more sensitive to implantation damage than ion channeling. Changes in the ECP of Si and CdTe were observed after implantations with 200 keV Ar and 320 keV In ions at doses as low as 1×1012 cm−2 and 1×1013 cm−2, respectively. Moreover, electron channeling is capable of probing areas about four orders of magnitude smaller than commonly used ion channeling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103953
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  • 8
    Electronic Resource
    Electronic Resource
    Cd-H pairs in GaAs: Identification and stability (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cd-H complex in 111mCd-doped GaAs implanted with low-energy (150–400 eV) hydrogen atoms is identified and studied by perturbed angular correlation spectroscopy using radioactive 111mCd as a probe. By measuring the fraction of Cd-H pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED=1.35(10) eV. After 111mCd implantation but preceding the H loading, the GaAs samples have to be annealed at temperatures exceeding 900 K in order to form Cd-H pairs. These temperatures are in agreement with the temperature range required for electrical activation of Cd implants, suggesting that a Coulombic interaction is responsible for the formation of Cd-H pairs in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105079
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical isolation of GaN by ion implantation damage: Experiment and model (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical isolation of unintentionally doped GaN layers due to the damage created by H+ and He+ ions passing through the layer are demonstrated. As a result of the irradiation, the sample resistance increases by 11 orders of magnitude and the band-to-band photoluminescence (PL) emission is totally quenched. Following annealing (1000 °C, 30 s), the conductivity can be nearly completely recovered, whereas only partial recovery of the PL emission is obtained. A model is proposed which invokes the presence of potential barriers for electronic transport across extended defects as the major factor limiting carrier mobility. Radiation defects increase these barriers, thus affecting the sample resistivity. This model fits the experimental results for both H and He induced damage extremely well and thus proves that defects created by nuclear collisions of the ions traversing the layer are responsible for the observed effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123874
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-induced electron emission from diamond (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron emission yields (γ) from conductive (B doped) and undoped chemical vapor deposited diamond caused by light (protons) and heavy (argon) ion impact were measured as functions of ion dose and energy (40–300 keV). Very large values of γ are obtained for the case of B doped diamond for both ions. Whereas the emission due to Ar is found to decay very rapidly towards the low γ value measured for graphite, it remains persistently very high (γ∼25) for the case of protons, indicating possible application of diamond as a sensitive detector for light ions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121718
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