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  • 1
    Electronic Resource
    Electronic Resource
    Time-of-flight measurements of single rovibrational states of carbon monoxide (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 1854-1857 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new technique has been developed for the measurement of the translational energy of molecules in single rovibrational quantum states. Molecules from a given rotation–vibration level are excited to a long-lived electronic state by a pulsed, tunable ultraviolet (UV) laser and are allowed to collide with the surface of a low work function metal. Since the energy of the metastable state exceeds that of the metal's work function, collisions result in the ejection of electrons from the metal surface, which may be detected with high efficiency. This technique has been applied successfully to the carbon monoxide system, where measurements of molecular beam velocities and extremely weak forbidden electronic transitions have been made. The detection efficiency of this technique is estimated to be 2.0×10−4, comparable with electron impact ionization and mass-selected detection. Possible future applications of the technique in spectroscopy, photodissociation, and photon stimulated desorption experiments are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462086
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  • 2
    Electronic Resource
    Electronic Resource
    Reconstruction theory of thermal conductivity depth profiles by the modulated photoreflectance technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 675-682 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reconstruction theory of thermal conductivity depth profiles from modulated photoreflectance data has been reported. This theory is based on the pulsed spectrum technique and a regularization method. The performance of this approach is illustrated by numerical simulations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368122
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  • 3
    Electronic Resource
    Electronic Resource
    Wide optical bandwidth asymmetric Fabry–Pérot reflection modulator using the quantum confined Stark effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5761-5765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A normally on, high-performance quantum confined Stark effect asymmetric Fabry–Pérot reflection modulator with enhanced optical bandwidth is reported. The wide optical bandwidth is achieved by utilizing the variation in refractive index in the vicinity of the heavy-hole exciton. The nominal operating wavelength is set in the region where the on-state refractive index starts to increase and allows the Fabry–Pérot resonance condition to be maintained over a wide wavelength range. An optical bandwidth of 5 nm is achieved for an operating voltage of 7 V, insertion loss 〈2.5 dB, reflectance change 〉55% and contrast ratio 〉15 dB, and 7 nm if the contrast ratio is relaxed to 〉10 dB. These values are twice as wide as previously reported for a quantum confined Stark effect modulator structure, and correspond to an operating temperature range of 25 °C compared to 10 °C for conventional structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368867
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and xerographic properties of phthalocyanine codeposited composite film and ultrathin multilayered structure (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 748-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical and xerographic properties of the phthalocyanine codeposited composite (cDC) films and ultrathin multilayered (UTML) structures have been studied. Observed UV-visible absorption spectra indicate that the Q-band absorption of the cDc films is different from that of the single component films, and from that of the UTML structures. The absorption peaks are shifted with the number and thickness of the layers. This spectral variation is most likely to be due to the dipole–dipole and charge transfer interactions among different molecular assemblies. The photosensitivity of the cDC films is superior to that of the single component films. This improvement is attributed to the efficient photoinduced charge transfer and charge separation among the composites. Moreover, the photosensitivity of the UTML structures is over tenfold better than that of the cDC films, probably due to the ultrafast photoinduced charge transfer and separation and the unipolar transport of the photogenerated holes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427432
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  • 5
    Electronic Resource
    Electronic Resource
    Field-dependent behavior of longitudinal ultrasonic attenuation in UPt3 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3420-3421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possible phase transition is evident in the field dependent behavior of the ultrasonic attenuation in UPt3. In the low field region the behavior is linear and in the high field region close in Hc2 the behavior is quadratic in h'=(Hc2−H)/Hc2. At the crossover there is a small peak in the ultrasonic attenuation. The temperature dependence of the coefficients a(T), for the linear behavior, and b(T), for the quadratic behavior are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340752
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  • 6
    Electronic Resource
    Electronic Resource
    Shift in maximum of sound attenuation with magnetic field in UPt3 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3686-3688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured ultrasonic attenuation and ac susceptibility simultaneously on a UPt3 single crystal, in various constant magnetic fields at 293 MHz, and in zero field at several frequencies. The temperature of the attenuation maximum Tmα appears lower than (or very close to) the susceptibility transition temperature Tcχ. A breakpoint is defined, which occurs always at a lower temperature Tbp than Tmα. The shift of this breakpoint, Tcχ −Tbp, exhibits a small frequency dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340686
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  • 7
    Electronic Resource
    Electronic Resource
    Stabilization of face-centered-cubic Mn films via epitaxial growth on GaAs(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of fcc Mn films on the GaAs(001) surface has been achieved. The films are studied by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD). The lattice parameters of the metastable Mn films are determined to be 0.362 nm. A transition region composed of a Mn-Ga-As alloy is formed at the Mn/GaAs interfaces and is clearly verified by XRD measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112466
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  • 8
    Electronic Resource
    Electronic Resource
    Dispersion, refinement, and manipulation of single silicon nanowires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully dispersed silicon nanowires in liquid by a mild etching treatment. A transmission electron microscopic study reveals that the etching occurs selectively at the defect sites of the wires. This implies that the treated wires have much fewer defects than those of the raw material. We have adopted an electrophoresis method, which is usually used in biosciences, to mount single nanowires onto chosen electrodes of a prototype device. The mounting of the wires was checked using scanning probe microscopes. Compared with the commonly used microactuation method, our method is far more applicable to industrial device fabrication, which may require simultaneous manipulation of a large number of wires. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456966
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropy of superconductivity from MgB2 single crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium diboride (MgB2) single crystals, with a maximum size of 0.5×0.5×0.02 mm3, were grown by the vapor transport method in a sealed molybdenum crucible. A superconducting transition with the onset temperature of 38.6 K was confirmed by both transport and magnetization measurements. The upper critical field anisotropy ratio, Hc2(parallel)ab(0)/Hc2(parallel)c(0), was estimated to be 2.6 from the magnetic field-temperature phase diagram for MgB2 single crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413729
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  • 10
    Electronic Resource
    Electronic Resource
    Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 177-179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning spreading resistance microscopy (SSRM) is a carrier profiling method based on atomic force microscopy (AFM), which has proven its power for two-dimensional semiconductor device analysis in the last few years. A three-dimensional approach is presented for depth profiling on the nm scale and for device inspection from the top surface. A procedure for SSRM on the InP structure is developed, where layers a few nm thick are continuously scratched away while scanning the region of interest with a highly doped diamond tip. This extends the SSRM to the third dimension, as SSRM images taken at different depths can be combined to construct a three-dimensional image of the sample. Based on the same technology, a "depth profiling" mode is developed whereby a well-defined etched pit is made. SSRM measurements taken on the side made of the etched pit provide a carrier profile to overcome the limitations of standard cross-sectional profiling and enable profiling of the layer with nm resolution. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490399
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