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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1850-1852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349503
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  • 2
    Electronic Resource
    Electronic Resource
    Growth morphology and characteristic structure in nanocrystalline Si film of high conductivity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of hydrogenated nanocrystalline Si film with high electronic conductivity is investigated by means of transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Nearly parallel columnar structures with growth orientation along the [110] zone axis of Si are found from cross-sectional TEM images of the film. HRTEM observation reveals that these columns are composed of nanocrystallites (3–6 nm size) and dendritelike growth morphology, while in the region between columns the texture consists of smaller sized (〈3 nm) grains embedded in a hydrogenated amorphous Si. The volume fraction of the crystalline component is about 58% measured by Raman spectroscopy. The conductivity of the film is very high, about 10−1 (Ω cm)−1. It is considered that this is directly related to the characteristic structure of the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113613
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