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  • 1
    Electronic Resource
    Electronic Resource
    Photoresponse of ion-beam-deposited Y-Ba-Cu-O thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3043-3046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the microstructure and photoresponse of ion-beam-deposited Y-Ba-Cu-O granular thin films. High-temperature superconductor thin films of the average composition YBa1.8Cu3.6Ox were ion-beam deposited onto yttria-stabilized zirconia and strontium titanate substrates from a composite target. Post-annealing processes were used to control the degree of granularity in these films, and led to films which varied in superconducting behavior. The microstructures of these films were studied by secondary electron microscopy and Auger analysis. Photoresponse and resistivity were measured as a function of temperature. We found that the degree of granularity in our films correlates with their resistivity and photoresponse which are similar to those of epitaxial or granular films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346397
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  • 2
    Electronic Resource
    Electronic Resource
    cw femtosecond pulses tunable in the near- and midinfrared (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1893-1895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous tuning of a cw femtosecond optical parametric oscillator (OPO) is demonstrated from 0.755–1.04 μm for the signal branch, and from 1.5–3.2 μm for the idler branch, covering most of the potential tuning range of the device. Transform-limited pulses under 120 fs in duration are found throughout the signal tuning, and idler pulsewidth measurements suggest pulses of less than 215 fs should be possible throughout the idler tuning. These results have been achieved using a new walkoff compensation scheme in the OPO. Preliminary results of transmission correlation measurements of carrier relaxation in InGaAs are presented using the parametric oscillator as a tunable excitation source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349468
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  • 3
    Electronic Resource
    Electronic Resource
    The determination of electronic dephasing rates in time-resolved quantum-beat spectroscopy (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 1568-1574 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-resolved quantum-beat spectroscopy provides a simple method for determining the amplitude relaxation times of heavily damped vibrational modes in large molecules. We report a calculation which shows that the dephasing times of the electronic transitions involved in producing the beats may also be determined from a pump–probe experiment. The method involves detecting the phase of the quantum beats at several wavelengths within the probe pulse spectrum. It requires only the addition of a spectrometer to the experimental setup; it does not require a tunable wavelength pump or probe pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458088
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial chemistry of Alq3 and LiF with reactive metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2756-2765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and chemistry of interfaces between tris-(8-hydroxyquinoline) aluminum (Alq3) and representative group IA and IIA metals, Al, and Al/LiF have been studied by x-ray and ultraviolet photoelectron spectroscopies. Quantum-chemical calculations at the density functional theory level predict that the Alq3 radical anion is formed upon reaction with the alkali metals. In this case, up to three metal atoms can react with a given Alq3 molecule to form the trivalent anion. The anion formation results in a splitting of the N 1s core level and formation of a new feature in the previously forbidden energy gap. Virtually identical spectra are observed in the Al/LiF/Alq3 system, leading to the conclusion that the radical anion is also formed when all three of these constituents are present. This is support by a simple thermodynamic model based on bulk heats of formation. In the absence of LiF or similar material, the reaction of Al with Alq3 appears to be destructive, with the deposited Al reacting directly with the quinolate oxygen. We proposed that in those circumstances where the radical anion is formed, it and not the cathode metal are responsible for the electron injection properties. This is borne out by producing excellent injecting contacts when Ag and Au are used as the metallic component of the cathode structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324681
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxidative and reductive treatments of indium–tin–oxide (ITO) on the performance of electroluminescent devices is presented. The improvement in device performance is correlated with the surface chemical composition and work function. The work function is shown to be largely determined by the surface oxygen concentration. Oxygen-glow discharge or ultraviolet–ozone treatments increase the surface oxygen concentration and work function in a strongly correlated manner. High temperature, vacuum annealing reduces both the surface oxygen and work function. With oxidation the occupied, density of states (DOS) at the Fermi level is also greatly reduced. This process is reversible by vacuum annealing and it appears that the oxygen concentration, work function, and DOS can be cycled by repeated oxygen treatments and annealing. These observations are interpreted in terms of the well-known, bulk properties of ITO. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370948
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation and properties of lead-zirconate-titanate ferroelectric thin films using radio frequency planar magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3931-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead-zirconate-titanate [Pb(Zr52Ti48)O3,PZT] thin films, 0.5 μm thick, were deposited onto Pt/Si substrate at room temperature using the radio frequency planar magnetron sputtering technique. A perovskite structure in the PZT thin film was obtained after the annealing processes. The annealing temperature varied from 650 to 750 °C in this experiment to find the optimized annealing temperature. Using x-ray diffraction analysis, the lowest full width of the half maximum (110) plane was 0.23° for the sample at 650 °C annealing temperature. The values of the remanent polarization Pr and coercive field Ec of the PZT thin film were 100 nC cm−2 and 0.6 kV cm−1, respectively, at 60 Hz. The measured pyroelectric coefficient in 0.5 μm thin films was 3.12×10−4 C/m2 K at 50 °C. Their dielectric constant and loss tangent were 494 and 0.072, respectively, at 1 kHz. The surface structure of the PZT thin film was examined using scanning electron microscopy and the grain size was in the range of 0.08–0.14 μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372437
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  • 7
    Electronic Resource
    Electronic Resource
    High resolution reflectivity diffractometer on Station 2.3 (Daresbury Laboratory) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1224-1229 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high resolution reflectivity diffractometer (HRRD) has been recently commissioned on Station 2.3 at the SRS, Daresbury Laboratory. Using the instrument which is x-ray wavelength tunable, the characterization of the interface structure in an ion-assisted deposited Co/Cu multilayer has been carried out. In order to improve the electron density contrast of the sample, we have used an x-ray energy near the Cu K edge of 8.989 keV. By scanning the normal (specular), near normal (off specular), and parallel axes (transverse) of the surface, we have obtained useful reflectivity intensity data. By applying simulations to the data, we have determined a total roughness (rms) of 6.0±0.5 Å with a significant contribution from correlated interfacial roughness (4.2±0.2 Å). Other detailed structural information obtained has successfully demonstrated that the commissioned instrument is a viable tool for reflectivity studies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148754
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  • 8
    Electronic Resource
    Electronic Resource
    The magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7452-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) were investigated by x-ray phase analysis and magnetic measurements. It is shown that Si substitution for Fe leads to a phase transition at x=0.2, and that the mean iron magnetic moment μFe of R2(Fe1−xSix)17 compounds (R=Dy, Y) decreases as Si concentration x increases; moreover, there is a maximum of dependence Tc(x) at about x=0.16. It is found that the exchange interaction constant AFeFe in R2(Fe1−xSix)17 compounds (R=Dy, Y) increases with x increasing by means of mean-molecular-field analysis of Tc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357972
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  • 9
    Electronic Resource
    Electronic Resource
    Model for calculating Tc of pluralistic magnetic component compounds (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7456-7460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A coupling model of the pluralistic magnetic component R-T intermetallic compounds (R denotes rare earth, T denotes transition metal) has been proposed by means of the mean-molecular-field analysis. Using the model, the Curie temperature Tc of (Sm1−xPrx)2Fe17 compounds has been calculated and the calculated values have been compared with the experimental values. It is found that the former are consistent with the later. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357973
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  • 10
    Electronic Resource
    Electronic Resource
    Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because the confinement of carriers in a quantum well constraints the crystal momentum of the carriers near the band edge to directions close to the well normal, the selection rules for conduction to heavy-hole transitions yield a large anisotropy in the absorption cross section. We predict a new type of room-temperature polarization bistability based upon this effect in a semiconductor laser with an intracavity multiple quantum well saturable absorber. Rate equation analyses of the static device characteristics as a function of various parameters are presented, and show that two-mode bistable behavior with large hysteresis is possible over a broad range of conditions. Other modes of operation, including all-optical switching and tristable operation, have been verified by numerical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105031
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