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  • 1990-1994  (28)
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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of buried pseudomorphic InGaAs layers using high-resolution x-ray diffraction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3362-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness and composition of the InGaAs layer in GaAs/AlGaAs/InGaAs/AlGaAs/GaAs high-electron-mobility transistor devices were determined to within ±5 A(ring) and ±0.003, respectively, using high-resolution x-ray diffraction. The combined thickness of the capping AlGaAs and GaAs layers were also determined to within ±5 A(ring). Although the interference effects near the substrate peak in the diffraction pattern may be identical for structures with different InGaAs thicknesses, the peak from the buried InGaAs layer will be different. In other words, if the diffraction from the buried layer is measured, one can readily distinguish between structures whose interference peaks are otherwise the same. It is also shown that the use of different reflections removes the ambiguity associated with interference peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357461
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  • 2
    Electronic Resource
    Electronic Resource
    Strain and mosaic spread of carbon and gallium co-implanted GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2066-2069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357615
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2418-2420 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lifetimes at Ga1−xInxP/GaAs heterojunction interfaces determined by photoluminescence power dependence measurements and diffusion model calculations have been correlated to dislocation densities derived from high-resolution x-ray diffraction measurements. The diffusion model calculations are used to determine lifetimes in the region of misfit dislocations by fitting experimental power dependencies of buried-layer photoluminescence. High-resolution x-ray diffraction reveals dislocation densities through the broadening of diffraction peaks due to slight lattice tilts introduced by the dislocations. Lifetimes and dislocation density per dislocation length are correlated to show the functional relationship between the dislocation density and the density of the lifetime-limiting recombination center at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356264
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and properties of thin GaAs epitaxial layers on Al2O3 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6497-6506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic vapor-phase epitaxy of GaAs on Al2O3 substrates was carried out over a growth temperature range of 600–800 °C. Several physical characterization techniques were used to obtain information on the initial stages of epitaxial growth and its influence on the physical properties of the epitaxial layer. The initial GaAs growth proceeds by island formation and coalescence, and the initial density of GaAs islands is a strong determinant of the epitaxial layer crystalline quality. An incommensurate growth model is presented to explain the dependence of the film properties on the growth parameters. The presence of defects in even very thick layers limits the applicability of these materials in device structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345125
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  • 5
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4814-4819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60° misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff'' distance for dislocation interactions in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350623
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  • 6
    Electronic Resource
    Electronic Resource
    Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1479-1481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105293
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  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351295
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1040-1042 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging from 4×1017 to 3.5×1020 cm−3. The dependences of GaAs lattice parameter and hole concentration on atomic carbon concentration have been determined from x-ray diffraction, Hall effect, and secondary-ion mass spectrometry measurements. For atomic carbon concentrations in excess of 1×1019 cm−3, the hole concentrations are less than the corresponding atomic carbon concentrations. Lattice parameter shifts as large as 0.2% are observed for carbon concentrations in excess of 1×1020 cm−3, which results in misfit dislocation generation in some cases due to the lattice mismatch between the C-doped epilayer and undoped substrate. Over the entire range of carbon concentrations investigated, Vegard's law accurately predicts the observed lattice contraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102608
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional oxygen doping ((approximately-greater-than)1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen-bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction 〈0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105038
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 814-816 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed high-resolution double-crystal x-ray diffraction and transmission electron microscopy to characterize Si/Si1−xGex strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique. Rocking curve analyses showed uniform layer thickness and alloy composition across superlattices of 10 periods. Extensive dynamical x-ray simulation indicated that heterointerfaces were abrupt and the Si layer was found to be 206±5 A(ring) thick and SiGe layer was 8.25% Ge and 185±5 A(ring) thick. The thickness values were confirmed by the cross-sectional transmission electron microscopy. A tilt angle of 26 arcsec was observed between the (001) planes in the superlattice and the substrate, resulting from steps on the surface of 〈100〉 2° off oriented Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105352
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