Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1946-1947
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial GaAs films are grown by the close space vapor transport technique, using atomic hydrogen as the initial reactant. Measurements of concentration and mobility of majority carriers reveal that the grown films are n type, with donor concentrations ND≈1017 cm−3, and mobilities at 300 K of μn≈3600 cm2 V−1 s−1. The growth and etching rates versus inverse temperature plots show an Arrhenius dependence with an activation energy of 36 kcal mol−1 in both cases.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357651
Permalink
|
Location |
Call Number |
Expected |
Availability |