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  • 1995-1999  (270)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1570-1573 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus using the inductance method has been built to test the homogeneity of large area high-Tc superconducting thin films. The apparatus has an X–Y scanning probe that can be moved at liquid nitrogen temperature to test the different regions of the films. The sample chamber of the apparatus can provide large area with high temperature homogeneity. The maximum sample size that can be measured is 50×50 mm2. A small size of high-Tc superconducting thin film is applied to test the temperature homogeneity of the testing system and the sameness of the gap distance between the surface of the film and probe. A method for testing the apparatus is illustrated, and some experiments for the test of the apparatus have been performed. Experimental results find that the maximum temperature difference is 0.05 K at the surface of the sample mounter, and the drive field remains constant within the error of 5% in the process of X–Y scanning. The apparatus can test the homogeneity of high-Tc superconducting films not only by the superconducting transition temperature Tc, but also by the critical sheet current density Kc. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2138-2140 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr2(AlTa)O6 thin films (2000–3000 A(ring)) have been deposited on MgO (001) substrates using pulsed laser deposition (PLD). X-ray-diffraction analysis shows that the Sr2(AlTa)O6 grows with the c axis highly oriented normal to the substrate plane and very good in-plane epitaxy. The subsequently deposited YBa2Cu3O7−x films using PLD on Sr2(AlTa)O6 buffered MgO substrates exhibit excellent epitaxial growth with a narrow rocking curve width and a small φ scan peak width. The critical temperature Tc0 of 90–92 K has been achieved reproducibly and the critical current density is over 2.7×106 A/cm2 at 77 K. © 1995 American Institute of Physics.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to build high-temperature superconductor (HTS) multichip modules (MCMs), it is necessary to grow several epitaxial layers of YBCO that are separated by thick dielectric layers without seriously affecting the quality of the YBCO layers. In this work, we have successfully fabricated YBCO/YSZ/SiO2/YSZ/YBCO structures on single-crystal LaAlO3 substrates using a combination of pulsed laser deposition for the YBCO layers and ion-beam-assisted rf sputtering to obtain biaxially aligned YSZ intermediate layers. The bottom YBCO layer had a Tc∼89 K, Jc∼7.2×105 A/cm2 at 77 K, whereas the top YBCO layer had a Tc∼86 K, Jc∼6×105 A/cm2 at 77 K. The magnetic field and temperature dependence of Jc for the YBCO films in the multilayer have been obtained. The results for each of the YBCO layers within the YBCO/YSZ/SiO2/YSZ/YBCO structure are quite similar to those for a good quality single-layer YBCO film. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8838-8840 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN. The transition rate is determined by integrating Fermi's golden rule for a two-body, screened Coulomb interaction over the possible final states using a numerically generated dielectric function and pseudowavefunctions. The full details of all relevant conduction and valence bands in zinc-blende and wurtzite GaN are included from an empirical pseudopotential calculation. It is found that the transition rate is consistent with a relatively "soft'' threshold energy. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1123-1130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport critical current of Bi:2223 tapes was measured in magnetic fields up to 15 T and at temperatures from 4.2 to 84 K. At high temperatures, the critical current density Jc is strongly anisotropic and the anisotropy increases rapidly with magnetic field, whereas at low temperatures the critical current is less anisotropic and the anisotropy is field independent above 1 T. In the former case we believe we are in a regime, where pinning limits Jc, at least within some parts of the tape, whereas in the latter case the limitation of Jc by Josephson weak links seems to be the dominant mechanism. In addition, a critical current hysteresis induced by flux trapping in a weak link network is observed, which is more pronounced at low temperatures. From transmission electron microscopy observations of the microstructure we find that the "brick'' in the "brick wall'' model turns out to be the colony instead of the grain inside the colony. Additionally it is found that colony boundaries parallel the ab plane and intersected boundaries occur much more frequently than boundaries parallel to the c axis, due to the misalignment of the colonies inside the tape. In a small region near the silver sheath colony misalignment is much smaller and boundaries parallel to the c axis may act as strong links at high temperatures as their interfaces are very clean and well matched. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 924-926 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large blue shift of electroluminescence (EL) was achieved from oxidized n-type porous silicon (PS) in a persulphate solution under cathodic polarization. The two-peak phenomenon observed in the EL spectrum suggests that there are two types of luminescent centers located in the nanoscale silicon particles and at the surface of the oxidized PS layer, respectively. It is found that only the low-energy peak having luminescent centers in nanoscale silicon particles can be tuned by voltage, supporting the quantum confinement model. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4777-4781 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN. Analytic expressions for spherical, nonparabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone are matched to experimental effective mass data and to a pseudopotential band structure. The low-field electron drift mobility is calculated for temperatures in the range of 300–600 K and for ionized impurity concentrations between 1016 and 1018 cm−3. Compensation effects on the mobility are also examined. Electron drift velocities for fields up to 500 kV/cm are calculated for the above temperature range. To aid GaN device modeling, the drift mobility dependences on ambient temperature, donor concentration, and compensation ratio are expressed in analytic form with parameters determined from the Monte Carlo results. Analytic forms are also given for the peak drift velocity and for the field at which the velocity peak is reached as functions of temperature. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1446-1449 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Monte Carlo method is used to simulate electron transport in bulk, wurtzite phase AlN using a three valley analytical band structure. Spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone are fitted to a first-principles band structure. The electron drift mobility is calculated as a function of temperature and ionized donor concentration in the ranges of 300–600 K and 1016–1018 cm−3, respectively. The effect of compensation on ionized impurity scattering and the associated change in the mobility are considered. The simulated electron steady-state drift velocity and valley occupancy for electric fields up to 600 kV/cm are presented for 300, 450, and 600 K. Our calculations predict that AlN will exhibit a much smaller negative differential mobility effect than GaN, and that the drift velocity versus electric field curve will show a very broad peak. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1803-1805 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acoustic velocities and their pressure dependence of bulk Zr41Ti14Cu12.5Ni9Be22.5C1 metallic glass (MG) have been measured up to 0.5 GPa by using a pulse echo overlap method. The elastic constants and thermodynamic parameters as well as their pressure dependence of the MG have been determined. The obtained elastic constants were compared to that of other kinds of glasses. More information about the microstructure, elastic properties, and glass forming ability of the MG was obtained. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 421-423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed laser deposition system with a rotating reflector, which can generate an extended plume with a diameter of about 40 mm, has been proven to be viable in producing large area YBa2Cu3O7 (YBCO) thin films. Films with uniformity of thickness and electrical properties to within a few percents were obtained. By making a further modification on this laser scanning system, YBCO films with various thicknesses can be deposited in situ on several pieces of substrates under essentially identical deposition conditions, and particularly, in a continuous fashion. The atomic force microscopy (AFM) images reveal that films grown on NdGaO3 follow the Stranski–Krastanov (layer then island growth) mode, while films grown on as-polished MgO and on annealed MgO follow the Volmer–Weber (islands without layer growth) mode and step-flow mode, respectively. © 1996 American Institute of Physics.
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