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  • 2000-2004  (202)
  • 1995-1999  (270)
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  • 1
    Electronic Resource
    Electronic Resource
    Selective In-Plane Photoelectrochemical Reaction of an Azobenzene Derivative in an Assembled Film (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 3352-3356 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100010a053
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous Vibrational Excitation in the Small Angle Scattering of He+ from HCl at Elab = 20-60 eV (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 15544-15550 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100042a032
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  • 3
    Electronic Resource
    Electronic Resource
    Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8838-8840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN. The transition rate is determined by integrating Fermi's golden rule for a two-body, screened Coulomb interaction over the possible final states using a numerically generated dielectric function and pseudowavefunctions. The full details of all relevant conduction and valence bands in zinc-blende and wurtzite GaN are included from an empirical pseudopotential calculation. It is found that the transition rate is consistent with a relatively "soft'' threshold energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362509
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial Sr2(AlTa)O6 films as buffer layers on MgO for YBa2Cu3O7−x thin film growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2138-2140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr2(AlTa)O6 thin films (2000–3000 A(ring)) have been deposited on MgO (001) substrates using pulsed laser deposition (PLD). X-ray-diffraction analysis shows that the Sr2(AlTa)O6 grows with the c axis highly oriented normal to the substrate plane and very good in-plane epitaxy. The subsequently deposited YBa2Cu3O7−x films using PLD on Sr2(AlTa)O6 buffered MgO substrates exhibit excellent epitaxial growth with a narrow rocking curve width and a small φ scan peak width. The critical temperature Tc0 of 90–92 K has been achieved reproducibly and the critical current density is over 2.7×106 A/cm2 at 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360197
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic field and temperature dependence of critical current densities in multilayer YBa2Cu3O7−δ films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6593-6595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to build high-temperature superconductor (HTS) multichip modules (MCMs), it is necessary to grow several epitaxial layers of YBCO that are separated by thick dielectric layers without seriously affecting the quality of the YBCO layers. In this work, we have successfully fabricated YBCO/YSZ/SiO2/YSZ/YBCO structures on single-crystal LaAlO3 substrates using a combination of pulsed laser deposition for the YBCO layers and ion-beam-assisted rf sputtering to obtain biaxially aligned YSZ intermediate layers. The bottom YBCO layer had a Tc∼89 K, Jc∼7.2×105 A/cm2 at 77 K, whereas the top YBCO layer had a Tc∼86 K, Jc∼6×105 A/cm2 at 77 K. The magnetic field and temperature dependence of Jc for the YBCO films in the multilayer have been obtained. The results for each of the YBCO layers within the YBCO/YSZ/SiO2/YSZ/YBCO structure are quite similar to those for a good quality single-layer YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361884
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropy of the critical current in silver sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1123-1130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport critical current of Bi:2223 tapes was measured in magnetic fields up to 15 T and at temperatures from 4.2 to 84 K. At high temperatures, the critical current density Jc is strongly anisotropic and the anisotropy increases rapidly with magnetic field, whereas at low temperatures the critical current is less anisotropic and the anisotropy is field independent above 1 T. In the former case we believe we are in a regime, where pinning limits Jc, at least within some parts of the tape, whereas in the latter case the limitation of Jc by Josephson weak links seems to be the dominant mechanism. In addition, a critical current hysteresis induced by flux trapping in a weak link network is observed, which is more pronounced at low temperatures. From transmission electron microscopy observations of the microstructure we find that the "brick'' in the "brick wall'' model turns out to be the colony instead of the grain inside the colony. Additionally it is found that colony boundaries parallel the ab plane and intersected boundaries occur much more frequently than boundaries parallel to the c axis, due to the misalignment of the colonies inside the tape. In a small region near the silver sheath colony misalignment is much smaller and boundaries parallel to the c axis may act as strong links at high temperatures as their interfaces are very clean and well matched. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360346
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral interactions in coadsorbate layers: Vibrational frequency shifts (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 2115-2122 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of coadsorbed argon, hydrogen, and oxygen on the internal vibration of CO on Ru(001) has been studied by infrared absorption spectroscopy in order to disentangle electrostatic and chemical frequency shifts. Ar is expected to lead only to the former, H only to the latter, and O to a combination. In all cases, intermolecular interactions among CO molecules are avoided by working at very low CO coverages (0.01–0.03 ML). Interestingly, the observed frequency shifts are discrete rather than continuous which is attributed to a local interaction. Density functional calculations for suitable clusters have been used to model the frequency shifts, arriving at good agreement with experiment. Analysis of these theoretical results is then used to quantify the contributions of electrostatic fields and of chemical effects on these shifts. It is shown that, despite very different signatures of the various coadsorbate species, the observed C–O frequency shifts are largely of electrostatic origin, provided one uses the electrostatic field generated by the coadsorbate and not an effective constant field. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479481
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  • 8
    Electronic Resource
    Electronic Resource
    Apparatus for detecting the homogeneity of large area high-Tc superconducting thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1570-1573 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus using the inductance method has been built to test the homogeneity of large area high-Tc superconducting thin films. The apparatus has an X–Y scanning probe that can be moved at liquid nitrogen temperature to test the different regions of the films. The sample chamber of the apparatus can provide large area with high temperature homogeneity. The maximum sample size that can be measured is 50×50 mm2. A small size of high-Tc superconducting thin film is applied to test the temperature homogeneity of the testing system and the sameness of the gap distance between the surface of the film and probe. A method for testing the apparatus is illustrated, and some experiments for the test of the apparatus have been performed. Experimental results find that the maximum temperature difference is 0.05 K at the surface of the sample mounter, and the drive field remains constant within the error of 5% in the process of X–Y scanning. The apparatus can test the homogeneity of high-Tc superconducting films not only by the superconducting transition temperature Tc, but also by the critical sheet current density Kc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146888
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of modulated electric field form and frequency on the electro-optical properties of CdS0.1Se0.9 nanocrystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1473-1475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroabsorption (EA) of CdS0.1Se0.9 nanocrystals was measured under pulse-like modulated fields and recovered both with similar frequency (1f ) and with double frequency (2 f ) of the applied field. The EA properties and the effects of applied field form and recovered frequency on the EA properties were studied. Electric field induced strong change of absorption (10−3) was observed in resonant and nonresonant regions. The EA signal in the resonant region was due to the quantum confined Stark effects and the signal in the nonresonant region was due to the change of local field that resulted in the change of refractive index, the change of absorption. The quadratic dependence of EA signal intensity on the electric fields indicated that the nanocrystals had third nonlinear optical susceptibility. The EA signal intensity measured with 1f mode was about ten times of that measured with 2 f mode. Perhaps the lower response measured with 2 f mode was due to the measured mode and the different response coefficient in different frequency regions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373841
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  • 10
    Electronic Resource
    Electronic Resource
    Deuterium in (Ba,Sr)TiO3 thin films: Kinetics and mechanisms of incorporation and removal during annealing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6378-6388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of deuterium doping of and removal from polycrystalline (Ba,Sr)TiO3 (BST) thin films during annealing were investigated using secondary ion mass spectrometry depth profiling, and the data were correlated to changes in the electrical behavior of the films. Results for deuterium doping of exposed BST films on a Pt bottom electrode layer are consistent with incorporation of deuterium interstitial defects at the BST/Pt interface and "upward" diffusion toward the film surface. The incorporation kinetics of deuterium in Pt/BST/Pt capacitors are more complex and are greatly enhanced by the presence of the Pt top electrode. Removal of deuterium from D2/N2-exposed Pt/BST/Pt specimens during oxygen recovery anneals appears to be limited by the rate of an interfacial reaction at low temperatures (200–250 °C). The pre-D2 exposure leakage current properties of the BST capacitors were found to be largely recovered when the deuterium concentration in the films was reduced to ∼1019 cm−3 during post-D2 oxygen recovery anneals. Recovery annealing in vacuum, although it removed deuterium from the films, was found to result in an increase in leakage current density for annealing temperatures greater than 300 °C. These results suggest that introduction of large amounts of positive space charge into the BST films has a pronounced effect on the electrical properties of the Pt/BST interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367316
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