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  • 1
    Electronic Resource
    Electronic Resource
    Intense visible light emission from fullerene-doped silica aerogel (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2801-2803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that fullerenes (C60/C70) can be uniformly encased in silica aerogel by sol-gel process together with supercritical drying technique. Intense visible light emission (2.26 eV) is observable with the naked eye from the composite under an Ar+ laser (488 nm) excitation at room temperature. The luminescent intensity is found to increase strongly with low doping of fullerenes (0.05 mol %) and then to decrease while the peak is red shifted, and finally quenched upon heavy doping (up to 2.5 mol %). This effect is consistent with the behavior of the fullerenes entrapped in the micropores linked by the silica networks resulting in the quantum confinement effect which then produce emission far above the interband gap of C60/C70. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358685
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  • 2
    Electronic Resource
    Electronic Resource
    Doping effects in organic electroluminescent devices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2105-2111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several possible doping effects in organic electroluminescent devices are studied within the framework of the trap-charge limited conduction models. A significant increase in the trapped charges in the doped layer can cause an overall trap charge redistribution and a shift of the location of the recombination zone. Some experimental data are analyzed and their possible relevance to our predictions is discussed. An experimental verification scheme is also proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368271
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  • 3
    Electronic Resource
    Electronic Resource
    A model for cw laser induced mode-mismatched dual-beam thermal lens spectrometry based on probe beam profile image detection (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 700-708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for cw laser induced mode-mismatched dual-beam thermal lens spectrometry using probe beam profile detection has been developed. This model exhibits the following behavior: after passing through the thermal lens the TEM00 Gaussian probe beam becomes the superposition of several Gaussian beams of different parameters. This model has a compact mathematical expression, for which experimental proofs are given. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360329
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6220-6223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several possible contributions to the valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes are analyzed. A theoretical model proposes that the field-assisted thermionic hole emission is the main valley leakage mechanism at high temperature and the Fowler–Nordheim hole tunneling is the dominant leakage path at low temperature and high bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360568
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  • 5
    Electronic Resource
    Electronic Resource
    Tamm states and donors at InAs/AlSb interfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1576-1581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized interface states, viz., generalized Tamm states, can be induced by an interfacial InSb bond in the InAs/AlSb heterojunction system, as confirmed by electronic structure calculations. The calculated energies of the interfacial Tamm states, however, are too low to account for the observed carrier concentrations in InAs quantum wells. Native defects capable of accounting for the observed carrier concentrations are identified, and their electronic structures calculated: AlSb in an AlSb layer is responsible for the semi-insulating character of thin InAs quantum wells and the n-type character of wide wells, and AsAl at an AlAs-like interface is responsible for the high values of electron concentration in the wells. The decrease of electron concentrations with temperature can be attributed to partial freezing of electrons into the shallow levels associated with ionized donors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358910
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal-wave resonator cavity (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4999-5005 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A thermal-wave resonant cavity was constructed using a thin aluminum foil wall as the intensity-modulated-laser-beam induced oscillator source opposite a pyroelectric polyvilidene fluoride wall acting as a signal transducer and cavity standing-wave-equivalent generator. It was shown that scanning the frequency of oscillation produces the fundamental and higher overtone resonant extrema albeit with increasingly attenuated amplitude—a characteristic of thermal-wave behavior. Experimentally, scanning the cavity length produced a sharp lock-in in-phase resonance with simple linewidth dependencies on oscillation (chopping) frequency and intracavity gas thermal diffusivity. The thermal diffusivity of air at 294 K was measured with three significant figure accuracy: 0.211±0.004 cm2/s. The novel resonator can be used as a high-resolution thermophysical property sensor of gaseous ambients. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146123
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  • 7
    Electronic Resource
    Electronic Resource
    Signal generation mechanisms, intracavity-gas thermal-diffusivity temperature dependence, and absolute infrared emissivity measurements in a thermal-wave resonant cavity (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 197-203 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operating thermal power transfer mechanisms in a thermal-wave resonant cavity were explored theoretically and experimentally. Both steady-state ac (thermal-wave) and dc temperature rise were considered, and conduction and radiation heat transfer modes were found to co-exist in the cavity. By introducing controlled variable offset dc resistive heating superposed on the fixed-amplitude thermal-wave oscillation, it was also found that the thermal-diffusivity values of the intracavity gas can vary sensitively as a function of the dc temperature rise within a thin boundary layer adjacent to the cavity thermal source (a metallic Cr–Ni alloy strip). This resulted in the measurement of the temperature dependence of the thermal diffusivity of air. Furthermore, the observed dominance of thermal-wave radiation power transfer in the phase channel of the thermal-wave signal at large cavity lengths allowed the measurement of the absolute infrared emissivity of the thin Cr–Ni strip source material: cursive-epsilon=0.091±0.004. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148495
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of discrete trap levels on organic light emitting diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2699-2705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of discrete trap levels on organic light emitting diodes under the space charge limited conditions. The interplay among the free, discrete, and exponential trap charges in single- and double-carrier devices is discussed. The sharp transitions in the current–voltage characteristics often associated with the discrete trap levels in single-carrier devices may disappear in double-carrier devices such as the organic light emitting diodes. The physics is elucidated using the energy and charge profiles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369587
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of discrete trap levels on carrier transport in organic electroluminescent devices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2646-2648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping effect on the current–voltage characteristics of organic electroluminescent devices is studied based upon the double-carrier injection theory. The equations for the currents in the trap-charge-limited region are derived by assuming a doping-induced discrete trap level in the energy gap. Possible explanations of current experimental observations are proposed based on the equations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367026
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  • 10
    Electronic Resource
    Electronic Resource
    Physical mechanisms in double-carrier trap-charge limited transport processes in organic electroluminescent devices: A numerical study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7706-7714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a numerical model to simulate the double-carrier injection trap-charge limited (TCL) transport processes in organic electroluminescent devices (OEDs). Current–voltage characteristics, energy and charge profiles are obtained and analyzed to understand the mechanisms governing the OED performance under TCL conditions. Good agreement with general experimental trends and previous analytical predictions are achieved. Dependencies on several important parameters (carrier injection level, device thickness, recombination constant, temperature, etc.) are also studied. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367942
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