Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2135-2137
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used cross-sectional scanning tunneling microscopy to perform atomic-scale characterization of InAs0.35P0.65/InP strained-layer multiple-quantum-well structures grown by gas-source molecular-beam epitaxy. High-resolution (110) cross-sectional images reveal nanoscale clustering of As and P in the InAsxP1−x alloy layers. Boundaries between As-rich and P-rich regions in the alloy layers appear to be preferentially oriented along the [1¯12] and [11¯2] directions in the (110) plane, suggesting that boundaries between As-rich and P-rich clusters tend to form within {111} planes in the lattice. The nanoscale compositional variations within the InAsxP1−x alloy layers lead to an asymmetry in interface quality in the (110) cross section, with the InAsxP1−x-on-InP interfaces being much smoother and more abrupt than the InP-on-InAsxP1−x interfaces. Analysis of (11¯0) cross-sectional images suggests that the clusters formed within the InAsxP1−x alloy are elongated along the [110] direction in the crystal. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121300
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