Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 604-606
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on an approach of using AlN/AlGaN superlattices (SLs) for threading-dislocation-density reduction to grow high quality thick AlGaN on sapphire. Using x-ray diffraction (XRD) measurements and etch pits counting by atomic force microscopy, we show that the insertion of AlN/AlGaN SLs suppresses the material mosaicity and decreases the threading dislocation density by two orders of magnitude, and then eliminates cracking. Dislocation densities deduced from the XRD results and those from chemical etching are in a good agreement. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1494858
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