Publication Date:
2015-01-06
Description:
In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi 2 Ta 2 O 9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60 Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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