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  • 1
    Electronic Resource
    Electronic Resource
    Hydrochemical evolution and environmental features of Salso River catchment, central Sicily (Italy) (2000)
    Springer
    Environmental geology 39 (2000), S. 1205-1215 
    Details
    ISSN: 1432-0495
    Keywords: Key words Geochemistry ; Surface and groundwaters water quality
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract  A hydrogeochemical study of the Salso River highlighted the chemical and isotopic space-time evolution along its flow path and the main contamination processes. Within the basin, three different hydrogeochemical facies have been individuated: (1) Ca-Mg-HCO3, (2) Ca-Mg-SO4 and (3) Na-Cl. The first facies reflects the chemical composition of the groundwaters hosted in the carbonate reliefs that belong to the Madonie Mountains. The second and the third facies are the result of the interaction processes between surface waters and the gypsum and salty clays, respectively. Two pollution sources have been also located in the basin downstream from the salt mine and downstream from a discharge area of wastewater from the town of Gangi. On the basis of the location of natural and anthropogenic pollution sources, the waters available for drinking and irrigation use are also indicated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002540000116
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  • 2
    Electronic Resource
    Electronic Resource
    Geochemical surveillance of the Solfatara of Pozzuoli (Phlegraean Fields) during 1983 (1984)
    Springer
    Bulletin of volcanology 47 (1984), S. 303-311 
    Details
    ISSN: 1432-0819
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract Geochemical surveillance of the Phlegraean Fields area has been intensified since 1983, in response to the increased uplift rate (brady-seismic activity). Fumarolic gases from Solfatara (Pozzuoli) were sampled and analyzed monthly. A Reducing Capacity (RC) monitoring unit was installed at Soffione, the most active fumarole in the Solfatara system. The preliminary analysis of the RC temporal variations suggest they are consistent with the rate of the seismic energy release. The composition of fumarolic gases indicates that the equilibrium temperature and pressure are higher than those of sampling. The observed variations in CH4 content are explained as an increase of pressure (from 1982 to the end of 1983) of about 70% at an extimated depth of 3–3.5 km. Finally, during 1983, there were no geochemical indications of both rising magma and significant accumulation of energy at shallow depth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01961561
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  • 3
    Electronic Resource
    Electronic Resource
    CO2 output and δ13C(CO2) from Mount Etna as indicators of degassing of shallow asthenosphere (1997)
    Springer
    Bulletin of volcanology 58 (1997), S. 455-458 
    Details
    ISSN: 1432-0819
    Keywords: Key words Etna ; Carbon dioxide output ; Magma degassing ; Volcanic activity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract  An estimated average CO2 output from Etna's summit craters in the range of 13±3 Mt/a has recently been determined from the measured SO2 output and measured CO2/SO2 molar ratios. To this amount the CO2 output emitted diffusely from the soil (≈ 1 Mt/a) and the amount of CO2 dissolved in Etna's aquifers (≈ 0.25 Mt/a) must be added. Data on the solubility of CO2 in Etnean magmas at high temperature and pressure allow the volume of magma involved in the release of such an amount of this gas to be estimated. This volume of magma (≈ 0.7 km3/a) is approximately 20 times greater than the volume of magma erupted annually during the period 1971–1995. On the basis of C-isotopic data of CO2 collected in the Etna area and of new hypotheses on the source of Mediterranean magmas, significant contributions of CO2 from non-magmatic sources to the total output from Etna are unlikely. Such large outputs of CO2 and also of SO2 from Etna could be due to an anomalously shallow asthenosphere beneath the volcano that allows a continuous escape of gases toward the surface, even without migration of magma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004450050154
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  • 4
    Electronic Resource
    Electronic Resource
    Free radical scavenging is involved in the protective effect of l-propionyl-carnitine against ischemia-reperfusion injury of the heart
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 288 (1991), S. 533-537 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(91)90231-7
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  • 5
    Electronic Resource
    Electronic Resource
    Myocardial ischemia-reperfusion injury-mechanism of protection by L-propionyl carnitine
    Amsterdam : Elsevier
    Free Radical Biology and Medicine 9 (1990), S. 98 
    Details
    ISSN: 0891-5849
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0891-5849(90)90521-J
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  • 6
    Electronic Resource
    Electronic Resource
    Vitamin A Inhibits Doxorubicin-Induced Membrane Lipid Peroxidation in Rat Tissues in Vivo
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 302 (1993), S. 103-108 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/abbi.1993.1186
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  • 7
    Electronic Resource
    Electronic Resource
    1/f noise investigations in small channel length amorphous silicon thin film transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3660-3667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction and low-frequency noise are analyzed in hydrogenated amorphous thin film transistors with small channel length. From current–voltage characteristics a set of conduction parameters is extracted pointing out parasitic resistances in series with the active channel. The low-frequency noise behavior is studied by means of the small equivalent circuit of the device. Intrinsic channel noise is separated from access resistance noise. Channel noise variations versus device biases agree with Hooge's theory (carrier mobility fluctuations) but the noise levels are greater than in crystalline metal-oxide-semiconductor transistors. For high drain current 1/f noise in access series resistances prevails and becomes the main noise source. So, the results show the important part taken by these resistances in conduction and noise. Some comments for the design of thin film transistors are given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366586
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  • 8
    Electronic Resource
    Electronic Resource
    Conduction and 1/f noise analysis in amorphous silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 923-928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction and low-frequency noise are analyzed in the channel of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. 1/f noise expressions are proposed starting from a simple conduction model describing drain current in the ohmic range. Carrier fluctuations (ΔN model) and mobility fluctuations (Δμ model) are investigated. For long-channel transistors the conduction is quite similar to crystalline metal–oxide–semiconductor field-effect transistors but involving low mobility values. The 1/f noise behavior is analyzed by mobility fluctuations as predicted by Hooge's theory. For small channel transistors a crowding effect appears and access series resistances affect the conduction. The excess noise is then mainly controlled by these resistances when large gate voltages VGS are applied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360873
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  • 9
    Electronic Resource
    Electronic Resource
    1/f noise in metal–oxide–semiconductor transistors biased in weak inversion (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4192-4194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach to model 1/f noise in the weak inversion range of metal–oxide–semiconductor transistors (MOST) is proposed, based on Hooge's theory (mobility fluctuation model). Starting from conduction equations in the subthreshold regime, a method to evaluate the total number of carriers under the gate is presented and allows us to deduce the Hooge parameter αH. This model is applied to p-channel MOSTs. With the proposed model, the value of αH obtained in weak inversion is quite similar to this extracted in strong inversion allowing a unique description of the 1/f noise. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343517
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  • 10
    Electronic Resource
    Electronic Resource
    1/f noise modeling in long channel amorphous silicon thin film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1983-1989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1/f noise investigations in thin film transistors with long channel and thin thickness of amorphous silicon film are presented. It is found that the noise behavior follows the mobility fluctuation model in ohmic and saturation regimes, whereas in the subthreshold conduction, a quadratic law versus the drain current is observed. The noise modeling is proposed taking into account the equations usually utilized for crystalline silicon metal–oxide–semiconductor field-effect transistors according to Hooge's theory. Moreover, the Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model is adapted to predict the noise levels. Two noise parameters have been extracted: The first is used in the subthreshold region, whereas we show that the second, directly related to Hooge's parameter, is adequate to describe alone the noise in normal conduction up to the saturation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372124
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