Publikationsdatum:
2014-01-01
Beschreibung:
The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1to 512 cm−1as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2to 18.16 mA/cm2and from 6.89% to 8.58%, respectively.
Print ISSN:
1110-662X
Digitale ISSN:
1687-529X
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Energietechnik
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