ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices under hydrostatic pressure up to 4.5 kbar. The pressure coefficient obtained from the experiment, 15.3 meV/kbar, provides a strong evidence for the formation of the electric field domain due to Γ–X sequential resonant tunneling. At the same time, we have observed the transition between two kinds of sequential resonant tunneling processes within the pressure range from 0 to 4.5 kbar, where the transition pressure between Γ–Γ and Γ–X sequential resonant tunneling is Pt∼1.6 kbar. For P〈Pt, the electric field domain is formed by Γ–Γ sequential resonant tunneling, while for P(approximately-greater-than)Pt, the electric field domain is preferably formed by Γ–X sequential resonant tunneling. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117773
Permalink