ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Strong room-temperature infrared emission from Er-implanted porous Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4813-4815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication demonstrates a strong, room-temperature (RT), infrared (IR) (1.54 μm) emission from Er-implanted red-emitting (peaked at 1.9 eV) porous silicon (Er:PSi). Erbium was implanted into porous Si, bulk Si, and quartz with a dose of 1015/cm2 at 190 keV and annealed for 30 minutes in N2 at temperatures ranging from 500 °C to 900 °C under identical conditions. No RT IR emission was observed from Er implanted quartz and silicon after annealing at 650 °C (although after annealing at 900 °C very weak emission was observed from quartz at 9 K). The highest RT emission intensity at 1.54 μm was from Er:PSi with a peak concentration of 1.5×1020/cm3 and annealed at 650 °C. Even the luminescence intensity from Er:PSi annealed at 500 °C was 26 times higher than that observed from Er-implanted quartz at 400 keV and annealed at 900 °C. A reduction in photoluminescence (PL) intensity of about a factor of two from Er:PSi over the 9 to 300 K temperature range was observed which is consistent with Er in wide band gap materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359403
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electro-optic mode-displacement silicon light modulator (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3355-3359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of guided-wave electro-optical intensity modulator is proposed and analyzed. The waveguide consists of an N-type Si core layer on a P-type Si substrate. Foward bias on the N+-N-P-P+ diode decreases the refractive index of the core and displaces the fundamental guided mode downward into the substrate. However, the mode is not extinguished because the substrate is bounded by a P+ contact. A spatial filter at the output converts the mode displacement into optical intensity modulation. A Poisson and continuity equation solver and multilayer waveguide simulation were used to obtain numerical estimates of mode displacement in a realistic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349271
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Predicted band gap of the new semiconductor SiGeSn (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 539-541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct and indirect band gaps of Si1−x−yGexSny are inferred from the calculated energy-band structure of α-Sn and from the known structures of Ge and Si. Our assumptions are: that the energy-band shapes of the binaries Sn1−xGex, Ge1−ySiy and Si1−ySny change smoothly with x and y, and that the energy gap of SiGeSn can be estimated by interpolation from the gaps of SnGe, GeSi, and SiSn. The optical indices of refraction of SiGeSn are also estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347704
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Simulation studies of silicon electro-optic waveguide devices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4964-4970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several silicon-on-insulator guided-wave structures have been analyzed as potential electro-optic waveguide modulators using the pisces-ii two-dimensional (2D) device simulation program. From the electron and hole concentration data, the 2D refractive index profile is obtained. The profile is then spatially averaged with respect to a 2D cosine representation of the guided-wave E field to obtain the effective modal index changes at 1.3 and 1.55 μm. The channel-waveguide devices studied include the metal-oxide-semiconductor (MOS) diode, and the one or two-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with single-or double-transverse injection. The single-gate double-injection MOSFET modulator offers the most promise with 10−3 refractive index changes possible, changes comparable in size to the Pockels effect in LiNbO3 or GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347082
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Second-order optical susceptibility of strained GeSi/Si superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2342-2346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strain-induced ordered phase has been observed recently in the alloy layers of a GeSi/Si strained-layer superlattice in which the ordered unit cell is noncentrosymmetric. Using the bond-charge model of Jha and Bloembergen [Phys. Rev. 171, 891 (1968)], the second-order susceptibility and the linear electro-optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337947
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Optical band gap of the ternary semiconductor Si1−x−yGexCy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2470-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal alloys of diamond with Si and Ge are investigated theoretically. An indirect band gap Γv25' → Δc1 is found for the new semiconductor Si1−x−yGexCy over most compositions x and y, with an indirect Γv25' → Lc1 gap found for the remaining compositions. The estimated band gaps span the 0.62–5.5-eV-range. Predictions are made for band gap versus lattice parameter in the new alloy semiconductors Si1−xCx and Ge1−xCx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349403
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Silicon double-injection electro-optic modulator with junction gate control (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1831-1839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel structures for carrier-induced electro-optical phase modulation in crystalline silicon are examined. A new dual-injection field-effect transistor structure for guided-wave light modulation at 1.3 μm is proposed and analyzed. It consists of an elongated cathode-anode-gate structure integrated in a rib waveguide. Dual-gate and single-gate control are considered. The overlap between the plasma charge density and the optical guided mode is computed. For a cathode-anode voltage of 0.32 V, the effective refractive index of the waveguide mode changes by ΔN=1×10−3 when the gate voltage is altered by 12 V. Numerical estimates of the bias current, pinchoff voltage, interaction length, and modulator speed are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339878
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3639-3641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modeling and design studies show that a strain-balanced Si1−xGex/Si superlattice on Si1−yGey-buffered Si can be engineered to give an inverted effective mass HH2 subband adjacent to HH1, thereby enabling a 77 K edge-emitting electrically pumped p–i–p quantum staircase laser for THz emission at energies below the 37 meV Ge–Ge optical phonon energy. Analysis of hole-phonon scattering, lifetimes, matrix elements, and hole populations indicates that a gain of 450 cm−1 will be feasible at f=7.3 THz during 1.7 kA/cm2 current injection. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421079
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Silicon-based interminiband infrared laser (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3480-3485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of a room-temperature p-i-p coherently strained Si0.5Ge0.5/Si superlattice quantum-parallel laser diode have been made. Calculations have been made of the local-in-k-space population inversion between the nonparabolic heavy-hole valence minibands, HH2 and HH1. Lasing is at 5.4 μm and the optical dipole matrix element is 3.7 A. Analysis of radiative-and-phonon scattering between the "mixed" bands indicates a lifetime difference between the upper and lower states of 2.4 ps. At an injected current density of 5000 A/cm2, a laser gain of 134 cm−1 is calculated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366559
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra from porous silicon (111) microstructures: Temperature and magnetic-field effects (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3117-3119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible and near-infrared (IR) photoluminescence emission spectra (0.9–3.0 eV) from p-type porous Si(111) microstructures are reported as a function of temperature and magnetic field. The visible peak located at 1.84 eV at 4 K shifted to ∼1.56 eV at 575 K where it disappeared; the intensity reached a maximum value at ∼150 K. The photoluminescence spectrum showed no measurable shift in the peak position with magnetic field from 0 to 15 T. Strong IR intrinsic band-to-band emission above and below the bulk silicon band gap at ∼1.09 eV at 300 K was observed. This luminescence was found to be enhanced by two orders of magnitude or more over the IR spectrum from an unanodized wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106770
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...