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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5357-5357 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CoCrTa/Cr/Al and CoCrTa/Cr thin films were deposited on glass substrate at 280 °C using dc magnetron sputtering. The coercivity of CoCrTa/Cr films increased by introducing an Al underlayer. In 500 A(ring) CoCrTa/Cr films, the coercivity increased with increasing Cr thickness and saturated above 700 A(ring) Cr thickness (Hc=1050 Oe). On the other hand, in 500 A(ring) CoCrTa/Cr/700 A(ring) Al films, the coercivity increased sharply with increasing Cr thickness and showed a maximum value at 700 A(ring) Cr thickness (Hc=1380 Oe). The coercivity squareness of the CoCrTa/Cr/Al and CoCrTa/Cr films was increased with increasing Cr thickness. The coercivity squareness of CoCrTa/Cr/Al films was lower than that of CoCrTa/Cr films. To study the origin of coercivity enhancement in CoCrTa/Cr films when deposited on an Al underlayer, microstructures of the two films were investigated using transmission electron microscopy (TEM). We controlled grain sizes of CoCrTa films by changing the thickness of the Cr layer. The grain size of CoCrTa films increased with increasing Cr thickness. The coercivity of CoCrTa/Cr/Al films showed a maximum value at a grain size of 430 A(ring). These results suggest that the transition from single domain to multidomain could occur at a grain size of ∼400 A(ring). To understand the coercivity squareness changes by the introduction of an Al underlayer, the angular variation of coercivity was measured. The magnetization of CoCrTa/Cr films was reversed by domain wall motion.On the other hand, by the incorporation of an Al underlayer, the angular variation of coercivity deviated from the domain wall motion mode. Cross-sectional TEM studies of CoCrTa/Cr/Al films showed that Cr atoms in Cr layers diffused into an Al underlayer and Al atoms were detected in both Cr and CoCrTa layers, but magnetization of the magnetic layer was not decreased. The decrease in coercivity squareness of CoCrTa/Cr/Al films would be attributed to magnetic decoupling by segregation of Al atoms in grain boundaries of CoCrTa films. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6228-6230 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the effects of texture and interfacial roughness on the exchange anisotropy in NiFe/Cu/NiFe/FeMn spin valves with different buffer layers (no buffer, Cu, or FeMn) on Si(100) or Si(111) substrates by magnetron sputtering. The crystalline structure, surface topology, and exchange anisotropy field (Hex) were characterized. The exchange anisotropy was established all in (111), (200), and (220) textured samples and there was no systematic relationship between the type of texture and Hex. However, it was found that Hex increased as the surface roughness decreased. The results lead us to believe that interfacial roughness rather than crystallographic texture controls the development of the exchange anisotropy. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7612-7615 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (P1−P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As the free layer thickness decreased from 70 to 20 Å, the interlayer coupling field was increased due to the magnetostatic coupling (orange peel coupling). In the case of the thickness difference in the pinned layers, the interlayer coupling field agreed with the modified Néel model suggested in the top synthetic spin valve structures. However, in the case of tP1=tP2, and tP1=tP2+5 Å, it was found that the interlayer coupling field could not be explained by the modified Néel model. The deviation of the modified Néel model at the dip zone could be due to the large canting of the pinned layers, which depend on applied field and different thickness in synthetic antiferromagnetic structure. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of the interlayer coupling field was obtained when the Cu thickness is 32 Å. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5786-5788 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The anisotropic magnetoresistance of dc magnetron-sputtered Ni80Fe20 permalloy films showed the evolutionary transition of the sign, from the negative magnetoresistance to the positive magnetoresistance (PMR), as the thickness increases. A similar phenomenon with the angle between the field and the current was recently reported. In our study, however, the transition occurred in the transverse measurement at the fixed angle of 90°. Ni80Fe20 films were deposited on Si substrates in a magnetic field of 300 Oe at the ambient temperature and at the deposition rate of 4 Å/s. Because the PMR was known to be peculiar to the longitudinal measurement, it was investigated why the PMR in the transverse measurement occurred. By a vibrating sample magnetometer and magnetic force microscope, the PMR curve in the transverse measurement was found to be related to the canted hysteresis loop peculiar to the stripe domains caused by the perpendicular anisotropy. Unanticipated magnetostrictive strain by the compositional fluctuation and/or the effect of surface roughness was suggested as a plausible mechanism of the perpendicular anisotropy. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 4921-4928 
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of organic chemistry 36 (1971), S. 2717-2719 
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Optical and quantum electronics 27 (1995), S. 465-471 
    ISSN: 1572-817X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract High-quality and uniform bulk layers of (Al x Ga1−x )0.5In0.5P (x=0–0.7) and AlGalnP/GainP quantum wells (QWs) are grown on 2°-off (100) GaAs substrates by low-pressure metal organic vapour phase epitaxy at a low growth rate of 0.3 nm s-1. The amount of lattice mismatch and the variation of PL peak energy of (Al0.5Ga0.5)0.5In0.5P on the 50-mm substrate are less than 6×10-4 and 2 meV, respectively. (Al0.5Ga0.5)0.5In0.5P/Ga0.5In0.5P SQWs show narrow PL spectra even from a 0.6 nm well measured at 20 K. The variation of PL peak energy from (Al0.5Ga0.5)0.5In0.5P/Ga0.5In0.5P MQWs is less than 10 meV. Also, as-cleaved AlGalnP/GalnP lasers fabricated by a three-step MOVPE show a pulsed threshold current of 82 mA at room temperature, output power of 12 mW, and the lasing wavelength at 668.2 nm.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Springer
    Journal of applied electrochemistry 27 (1997), S. 365-367 
    ISSN: 1572-8838
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Elektrotechnik, Elektronik, Nachrichtentechnik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    ISSN: 1435-232X
    Schlagwort(e): Key wordsEXT1 ; EXT2 ; Germline mutation
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Abstract Hereditary multiple exostoses (EXT) is an autosomal dominantly inherited disease characterized by the formation of cartilage-capped prominences (exostoses) that develop from the juxtaepiphyseal regions of the long bones. Recently, EXT1 and EXT2 genes were cloned and germline mutations of EXT1 and EXT2 were identified in EXT families. In this study, we performed a mutational analysis of EXT1 and EXT2 genes in eight unrelated Korean EXT families by polymerase chain reaction (PCR)-single strand conformation polymorphism (SSCP) analysis followed by direct DNA sequencing. As a result, we were able to identify one family (SNU-OC3) with the EXT1 mutation and another family (SNU-OC15) with the EXT2 mutation. The EXT1 mutation was a 10-bp deletion at the 3′ end of exon 5 (CTAATTTAGg) including the splice site of this exon. The EXT2 mutation identified in the SNU-OC15 family was a missense mutation at codon 85 of exon 2 (T_GC ? C_GC), resulting in an amino acid change from cysteine to arginine. This missense mutation cosegregated with the disease phenotype in this family, suggesting that it is the disease-causing mutation. These two mutations identified in EXT1 and EXT2 are novel ones.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Publikationsdatum: 2011-09-05
    Print ISSN: 0003-6951
    Digitale ISSN: 1077-3118
    Thema: Physik
    Standort Signatur Erwartet Verfügbarkeit
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