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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3804-3807 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 347-351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6461-6468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grow InAs layers on (001) on-axis and misoriented GaAs substrates by molecular beam epitaxy, respectively. The critical thickness of each InAs layer is investigated with photoluminescence spectroscopy and transmission electron microscopy (TEM). We show that the critical thickness is significantly influenced by the substrate misorientation. The critical thickness of the InAs layer grown on the GaAs substrate misoriented toward the [11¯0] direction becomes thicker [5 monolayers (ML)] than that (3 ML) of the InAs layers grown on the GaAs substrates (001) on-axis or misoriented toward the [110] direction. The plan-view TEM images show that the islands grown coherently do not coalesce even beyond the on-axis critical thickness (3 ML). The strain energy is calculated based on valence-force-field model to investigate the interaction between dislocation and step in case on misoriented substrate. As results, we show that dislocation has the minimum length above which dislocation can stably exist and that the extra strain energy generated at the cross point of dislocation and step plays an important role in dislocation generation. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6363-6366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A randomly disordered quantum wire superlattice (d-QWR-SL) structure was fabricated by means of metalorganic vapor phase epitaxy. Photoluminescence (PL) and the carrier lifetime properties were investigated systematically. The PL intensity was found to be independent of temperatures below 170 K. This thermally stable feature was due to dramatic suppression of the nonradiative recombination in the wire region. The carrier lifetime measurement confirmed the high thermal PL stability in the d-QWR-SL structure. This high thermal PL stability may be due to the state localization in the d-QWR-SL structures. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 343-347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) properties and carrier lifetimes of spontaneously ordered Ga0.52In0.48P/GaAs are measured at low temperatures. Samples with values of degree of order S from 0.22 to 0.55 are used. The full width at half maximum of the PL increases from 9.36 to 30.6 meV with increasing S. The PL peak of the indirect transition is blueshifted with increasing excitation power, whereas the PL peak of the direct transition is not. The energy separation between the PL peaks for the direct and the indirect transitions becomes greater with increasing S. The carrier lifetime increases dramatically with increasing S, from 0.68 ns at S=0.22 to 13 800 ns at S=0.55 at the peak energy of the PL spectrum. The ordering dependence of these characteristics is interpreted using a simple physical model of the ordered state. Variations in the ordered state with increasing ordering are discussed. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4513-4517 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS) measurement is the technique to measure nondestructively the nearest-neighbor distance, to the accuracy within 0.01 A(ring) or better, coordination number, and atomic species. Especially, fluorescence-detected EXAFS is best suited to characterize the atomic scale microstructure of epitaxially grown thin layers on a thick substrate. We have investigated the microstructure for each atomic pair of Ga-P, Ga-As, and In-As in (Ga,In)(As,P) alloys lattice-matched with InP, over a wide range of composition from dilute limit, through quaternary, to ternary. Constant atomic distances over the wide range were revealed when the average lattice parameter was kept constant.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1296-1299 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new and stable scanning tunneling microscope (STM) system has been constructed for the investigation of thin organic films in air. The STM unit is made of Macor, which is machinable ceramic and has a small thermal expansion coefficient and a high mechanical stiffness. Three-dimensional coarse position adjustment (within 3 μm) is carried out using five stacked piezoelectric transducers (PZTs). A cross-type configuration is used to prevent the thermal effect of the x- and y-direction displacement mechanism. In order to achieve high resolution, x-, y-, and z-direction displacements are performed using a tube-type PZT. The z direction of the tube PZT has a high mechanical resonant frequency of 24.4 kHz. Therefore, this STM unit is mechanically rigid, and allows stable operation under mechanical disturbances (sound and mechanical vibration). Moreover, this STM unit can be controlled for 24 h or longer by using an ordinary operational amplifier, because thermal effects are compensated. The STM system can also be used to obtain information on the spatially resolved local tunneling barrier height, which is sensitive to the chemical structure of the sample. The capabilities of this newly designed STM are demonstrated with experiments investigating the morphology and tunneling barrier height of stearic acid thin films on indium-tin-oxide substrates. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 1341-1344 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of transient ionization in an intense, short laser pulse irradiated foil is investigated via a simulation based on the collisional particle-in-cell method coupled with the atomic kinetics. A strong electric field induced by superthermal electrons causes significant plasma ionization at the rear surface of the target. The plasma induced field ionization is found to dominate the production of the multiple-charged ions at the rear surface of the foil, which are accelerated forward up to multi mega electron volts by irradiation of a subpicosecond laser pulse with intensities from 1019 to 1020 W/cm2. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3718-3723 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of hot electrons produced by a very short, intense laser pulse (I=2/4×1018 W/cm2, 60 fs, λ=800 nm, obliquely incident p polarized) is investigated theoretically via particle simulation and experimentally via measurements of the electron distribution in the MeV region and the Doppler-shifted emission spectrum of fast ions. This energy distribution is shown to be greatly different from the known two-temperature distribution. The hot electrons with energies near the maximal (∼2 MeV) constitute the distribution with an effective temperature Th considerably higher than that of lower-energy electrons, which dominate the emission of energetic ions. The temperature scaling with the laser intensity differs from the known Th∼I1/2. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1261-1265 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth temperature (TG) dependence of the acceptor concentrations (NA) in Al0.1Ga0.9Sb grown by liquid phase epitaxy in a very wide growth temperature range (250–500 °C) was investigated. It was found that NA varies with TG down to 350 °C as NA ∝exp(Ea/kBTG) with Ea=0.47 eV and that below 350 °C NA fluctuates depending highly on growth conditions. Acceptors in Al0.1Ga0.9Sb grown above 350 °C were concluded to be intrinsic. These observations were successfully made using the improved extremely low-temperature growth process. The evaluation technique of measuring the impurity concentration in a thin epitaxial layer on the conductive GaSb substrate by C-V characteristics of metal-insulator-semiconductor structures was employed.
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