ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1306-1310 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effect of growth conditions (temperature, microwave power, and pressure) on the hydrogen incorporation and growth rate of (111) homoepitaxial diamond synthesized by microwave plasma assisted chemical vapor deposition is carried out by secondary ion mass spectrometry. Significant quantities of hydrogen incorporation in the (111) homoepitaxial diamond are detected for the growth conditions employed. Hydrogen concentration and growth rate are found to increase with an increase in the substrate temperatures. The increase of microwave power decreases the hydrogen incorporation and increases the growth rate. The effect of pressure rise is similar to that of microwave power. However, the effect of pressure rise over 50 Torr on hydrogen incorporation and growth rate is small. The decrease of hydrogen incorporation can be explained by the suppression of defects in the growing film by atomic hydrogen in the gas phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2869-2871 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with hydrogen after the irradiation and its concentration was in the order of 1016 cm−3. The efficiency of band edge emission was increased by the hydrogenation. However, the the degree of the improvements depended on impurity and defect concentration in the original samples. It was concluded that hydrogen in ZnO passivates deep donor and acceptor states by electron transfer from hydrogen to the defects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 765-767 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied nucleation and growth of diamond on nickel substrate by microwave plasma assisted chemical vapor deposition followed by in situ carbon–hydrogen solution treatment. The Raman depth profiles of isolated diamond crystals on the (100) and (111) surfaces were measured by confocal Raman spectroscopy. In the case of the crystals having the [111] growth direction, the 1332 cm−1 diamond peak was observed near the diamond–nickel interface and it shifted 1323 cm−1 towards the surface. The 1323 cm−1 peak may be assigned to "hexagonal diamond." The in-depth spectral change from cubic to hexagonal was observed in chemical vapor deposited diamond crystals. The chemical and/or structural effects of nickel substrate for dissolved carbon are essential for specific diamond crystallization. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3023-3025 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have verified that the condition of negative electron affinity (NEA) exists on hydrogen-terminated polycrystalline cubic boron nitride (c-BN) grown by the high-pressure high-temperature method using ultraviolet photoelectron spectroscopy. The NEA condition is thermally stable to 950 °C. At higher temperatures, the surface reverts to a positive electron affinity condition due to the desorption of surface bound hydrogen. Repeated annealing at high temperatures results in the degradation of the surface crystallinity, which manifests in the growth of a π→π* feature attributable to sp2-type bonds. Complete regeneration of initial valence band features and NEA conditions along with the suppression of the π→π* features can be achieved by subjecting the surface to atomic hydrogen etching. It is discovered that the He (II)-excited valence band spectra of c-BN display significant differences between the hydrogen-terminated and hydrogen-free surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2675-2677 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of oxygen in improving diamond quality has been investigated by comparing two (111) homoepitaxial diamond films deposited with H2–CH4 and H2–CH4–O2 mixtures by microwave assisted chemical vapor deposition. The (111) diamond deposited using a H2–CH4 mixture showed surface cracks due to the presence of nondiamond phases as well as a significant amount of hydrogen and silicon impurities. The (111) diamond deposited using a H2–CH4–O2 mixture showed an absence of hydrogen and silicon impurities and nondiamond phases, and exhibited a flat surface. The addition of oxygen is one of the suitable methods to produce high-quality (111) homoepitaxial diamond. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 629-631 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The suppression effect of oxygen on Si incorporation in homoepitaxial diamond films grown by microwave assisted chemical vapor deposition is investigated by secondary ion mass spectrometry. The Si depth profile in the multilayered diamond films continuously synthesized with different oxygen addition shows that Si incorporation decreases with increasing oxygen addition into the plasma. A change in the interfacial composition at the quartz glass due to oxygen-promoted surface chemistry may be the origin of this suppression effect. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 28-30 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface conditions favoring a negative electron affinity (NEA) on hexagonal boron nitride (h-BN) grown by radio-frequency plasma-assisted chemical vapor deposition (CVD) have been investigated by ultraviolet photoelectron spectroscopy. The NEA condition on the h-BN film appears to be resistant to oxygen-plasma or in-vacuo atomic oxygen treatment. It is not certain whether the segregation of bulk hydrogen onto the surface helps to promote the NEA; the depth profile of the deposited film reveals about 0.01%–0.1% atomic concentration of hydrogen. High temperature annealing at 1100 °C results in a positive electron affinity surface (PEA). Reexposure of PEA surface to atomic hydrogen at room temperature regenerates the NEA condition. This is evident of the role of superficial hydrogen in promoting NEA on the h-BN film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Morphologic changes that occurred during firing in undoped and sulfate-ion-doped yttria powders were examined in the present study. Clear scanning electron microscopy (SEM) images of uncoated insulators were achieved and charging of electrons was avoided by observing small samples, throughout which most of the electrons of the incident beam penetrated. SEM observation and firing of the samples were repeated several times. Searching the observed areas or particles started at low magnification, with the aid of photographs taken earlier. The sulfate-ion dopant inhibited volume diffusion and/or grain-boundary diffusion, and then particle growth of the sulfate-ion-doped yttria proceeded by surface diffusion or evaporation–condensation along with pore growth, which resulted in collapse of the agglomerates of primary particles. Although most of the other particles exhibited slight pore growth along with particle growth at temperatures as low as 800°C, a hardening of the agglomerated particles, because of pore elimination by volume diffusion and/or grain-boundary diffusion, occurred at temperatures 〉850°C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geostandards and geoanalytical research 15 (1991), S. 0 
    ISSN: 1751-908X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Trace level determination of nickel in silicate rock samples has been achieved using secondary ion mass spectrometry (SIMS) with kinetic energy filtering. Standard rock references, issued by the Geological Survey of Japan, were fused into glass and used as standards for the SIMS analysis. Due to interferences from the glass matrix, the secondary ion of mass 60 was only useful for Ni, although the secondary ion was interfered mainly by CaO+. The contributions of these molecular ions were deconvolved by a least squares regression. Good linear correlation between results after the deconvolution and the Ni concentration in the glass standards was obtained. The uncertainties of the SIMS analysis depend strongly on the degree of contribution of CaO+ molecular ion. Such a method of SIMS analysis is especially useful to study the detailed behavior of Ni on a micro-scale in Ca-poor materials.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: (Mg,Zn)O films were grown on Zn- and O-face ZnO single crystal substrates by pulsed laserdeposition. The surface morphologies of the films grown on the Zn- and O-face substrates werequite different, indicating that no domain inversion occurred in both films. The films showedmarkedly different features for valence band spectra obtained by hard X-ray photoemissionspectroscopy. This suggests that the effect of film polarity should be considered in X-rayphotoemission spectroscopy
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...