ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wallreactor with gas foil rotation. Excellent uniformity of 〈 2% for thickness and 〈 10% for doping hasbeen routinely obtained for both 3x2-in. and 1x3-in. growth. The highly uniform epitaxy ismaintained for the growth of a large range of doping concentrations (less than 5x1015 to greater than1.5x1019 cm-3) and thicknesses (0.25 – 60 μm). MESFET buffer/channel structure has beencharacterized with SIMS measurement showing sharp interface transition. Pinch-off voltages areextracted from CV measurements over a full 2-in. wafer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.195.pdf
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