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  • 1
    Electronic Resource
    Electronic Resource
    Distribution of Nitrogen in Petroleum According to Basicity (1952)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 2601-2605 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50515a037
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  • 2
    Electronic Resource
    Electronic Resource
    Near edge x-ray absorption fine structure of thermally annealed amorphous nitrogenated carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5043-5049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The change of structure of tetrahedral amorphous carbon (ta-C) films after nitrogen incorporation, particularly at a high concentration, was studied by near edge x-ray absorption fine structure (NEXAFS) spectroscopy and it was found to be very close to pyridine. The π* peak at the N K (nitrogen K) edge was decomposed into three components corresponding to different resonances. From a detailed analysis of N K edge by NEXAFS spectroscopy it was revealed that as the nitrogen concentration in the films increases, the σ*/π* intensity ratio decreases, indicating that there is an increase of the amount of C(Double Bond)N relative to the C–N bonds. By thermal annealing at different temperatures, up to 800 °C, the nitrogen concentration in the films is reduced. Intensity as well as the position of the π* peak at the C K edge changed with annealing temperature. At the same time, a decrease of the intensity of the π* peak at the N K edge and a very interesting change of the relative intensities of the three split components of this π* peak have been observed. The possible changes of structure of nitrogenated carbon films by annealing and thermal stability of the films have been thoroughly emphasized. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318389
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  • 3
    Electronic Resource
    Electronic Resource
    Valence band spectra of nitrogen incorporated amorphous carbon films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2414-2421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tetrahedral amorphous carbon (ta-C) films were deposited in a filtered cathodic vacuum arc chamber. Nitrogen, of atomic concentration up to 30%, was introduced in the films during deposition by a Kaufmann-ion source. Change of the film structure and the valence band (VB) spectra of ta-C film due to nitrogen incorporation was studied by ultraviolet photoelectron spectroscopy (UPS) using He I and He II excitations as well as x-ray photoelectron spectroscopy (XPS). A comparative study of the electronic structure between ta-C and the nitrogenated films was demonstrated by decomposition of their VB spectra into several bands and from the intensity difference of these spectra. An additional density of states close to the Fermi level (EF), representing the nitrogen lone pair state, has been detected from both UPS and XPS VB spectra of nitrogenated samples. From the shift of the VB relative to the EF nitrogen doping of ta-C is demonstrated. The change of the density of states at the edge of VB and especially the C 2s and N 2s states is thoroughly explained. The modification of the structure of nitrogenated films prepared by applying the substrate bias and temperature was also studied through comparison of the VB spectra. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337602
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  • 4
    Electronic Resource
    Electronic Resource
    Nitrogen doping of tetrahedral amorphous carbon films: Scanning tunneling spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1619-1624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous nitrogenated carbon films with nitrogen atomic concentration between 12% and 29% were deposited using a filtered cathodic vacuum arc and a Kaufman-type ion source. The surface topography of the samples has been investigated by scanning tunneling microscopy in ultrahigh vacuum, showing that the roughness of the film surface decreases with nitrogen concentration. Scanning tunneling spectroscopy is employed to understand the role of nitrogen in the change of the surface microstructure and electronic structure near the Fermi level. The tunneling current (I)–bias voltage (V) curve is flat at low bias regions indicating a finite gap for the sample with low (12%) nitrogen concentration. An increase of tunneling current and its nonlinearity along with the decrease of energy gap occurs in the samples with increase of N concentration. The observed surface density of states [(dI/dV)/(I/V)] has been fitted as a square-root function of bias voltage. An improvement of the quality of these fits in the films with the increase of nitrogen concentration suggests that a depletion of defect density of states near the Fermi level (EF) takes place. These analyses could be attributed to the modification of the structure of amorphous carbon by a large concentration of nitrogen. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339854
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of the TiSi2/p+n structures formed by ion implantation through silicide and rapid thermal annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 73-77 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicided p+n junctions and contact resistivity test structures were formed by implantation of BF2 through TiSi2 in crystalline as well as in Si+ or Ge+ preamorphized silicon. A subsequent rapid thermal annealing at 950 °C in nitrogen atmosphere was performed to activate the dopant, to remove the ion implantation damage, to increase the silicide conductivity, and to improve the electrical characteristics of the junction. Very low leakage currents and low contact resistivities were measured on samples without preamorphization. With Si+ or Ge+ implantation the channeling of boron was suppressed but residual defects below the original amorphous-crystalline (a-c) interface gave rise to an increased leakage current. A Ti-related defect level was found by deep level transient spectroscopy in the silicon substrate up to a depth of some micrometers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352097
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of titanium silicide during rapid thermal annealing: Influence of oxygen (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 815-817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of Ti/Si couples has been investigated by transmission electron microscopy using cross-section preparation, four-point probe measurement of sheet resistance, and Auger electron spectroscopy. The development of crystalline phases was determined in this way with high spatial and temporal resolution. Our results indicate the decisive influence of the solubility of oxygen on the phase sequence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351821
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  • 7
    Electronic Resource
    Electronic Resource
    The Isolation of Thianaphthene (Benzo(B)thiophene) from a Crude Petroleum (1956)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 2166-2167 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01591a038
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  • 8
    Electronic Resource
    Electronic Resource
    Thermoelectric power of nitrogen-incorporated tetrahedral amorphous-carbon films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4157-4159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tetrahedral amorphous-carbon (ta-C) films were deposited using a filtered cathodic vacuum arc in which nitrogen was incorporated up to an atomic fraction (fN) of 30%. Electrical conductivity and specially thermoelectric power (S) have been performed over a wide range of temperature. The room-temperature conductivity of these samples initially increases with fN up to several orders of magnitude compared to that of ta-C, followed by no dramatic change at higher nitrogen concentration. The sign of the S is negative in the samples with fN below ∼17%, then changes to a positive value with a higher fN. From thermal annealing of the nitrogenated samples a change of the sign of S and its dependence on fN has been analyzed. The small values of both room-temperature S and small variation of conductivity at high fN in all the samples suggest that electrical properties of these films are controlled by compensation of defects. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426696
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  • 9
    Electronic Resource
    Electronic Resource
    Raman spectroscopy investigation of size effects in cubic boron nitride (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 958-960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra were taken of cubic boron nitride (c-BN) crystals with diameters between 100 nm and 1 mm. The Raman line shape of the optical phonons was found to become increasingly asymmetric towards lower frequency shifts, broader and weaker with decreasing crystal diameters. The results can be explained in terms of a spatial correlation model. The corresponding correlation lengths lie in the nanometer range, i.e. several orders of magnitude below the actual crystallite sizes as determined by electron microscopy, thus revealing a high defect density. An additional examined typical c-BN film on a Si(100) substrate exhibits even weaker and broader structures consistent with an even higher defect density. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118452
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  • 10
    Electronic Resource
    Electronic Resource
    Mantle Convection Models (1978)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Earth and Planetary Sciences 6 (1978), S. 9-19 
    Details
    ISSN: 0084-6597
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ea.06.050178.000301
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