Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 317-319
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123035
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