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  • 1
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    Improved piezoelectric properties of poly(vinylidene fluoride) nanocomposites containing multi-walled carbon nanotubes (2013)
    Institute of Physics
    Details
    Publication Date: 2013-04-30
    Print ISSN: 0964-1726
    Electronic ISSN: 1361-665X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Sensitized Ho3+ up-conversion luminescence in Nd3+–Yb3+–Ho3+ co-doped ZrF4-based glass (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 909-913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As previously reported, a selectively strong green emission due to the Ho3+: (5F4, 5S2)→5I8 transitions is observed in Nd3+–Ho3+ co-doped ZrF4-based fluoride glasses under 800 nm excitation. As an attempt to more enhance Ho3+ up-conversion luminescences in the Nd3+–Ho3+ co-doped ZrF4-based glasses, Yb3+ ions were added to the glasses. As a result it was found that, in 800 nm excitation of 60ZrF4⋅30BaF2⋅(8−x)LaF3⋅1NdF3⋅xYbF3⋅1HoF3 glasses (x=0 to 7), sensitized up-conversion luminescences are observed at around 490 nm (blue), 545 nm (green), and 650 nm (red), which correspond to the Ho3+: 5F3→5I8, (5F4, 5S2)→5I8, and 5F5→5I8 transitions, respectively. The intensities of the green and red emissions in a 3 mol % YbF3-containing glass were about 50 times stronger than those in no YbF3-containing glass. This is based on sensitization due to Yb3+ ions. In particular, the green emission is extremely strong so that the Nd3+–Yb3+ –Ho3+ co-doped ZrF4-based glasses have a high possibility of realizing a green up-conversion laser glass. Up-conversion processes for the blue, green, and red emissions were two-photon processes assisted by Nd3+→Yb3+→Ho3+ energy transfer. The up-conversion mechanism in the glasses is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370822
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  • 3
    Electronic Resource
    Electronic Resource
    Faraday effect of GaS3/2–GeS2–LaS3/2-based glasses containing various rare-earth ions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5297-5300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulfide glasses of 50GaS3/2⋅20GeS2⋅20LaS3/2⋅10LnSn/2 (Ln=rare earth ions, n=2 for Eu and 3 for other ions) compositions have been prepared. The wavelength dispersions in the Faraday effect of the glasses have been examined. Glasses containing LaS3/2 and YS3/2 have positive Verdet constants in the wavelength region from 550 to 850 nm, and the magnitude of the Verdet constants decreases with increasing wavelength. On the other hand, the Verdet constants of glasses containing Eu2+ and Ce3+ are negative, and the absolute magnitude of the Verdet constants decreases with increasing wavelength. The effective transition wavelengths of glasses containing various paramagnetic rare-earth ions have been calculated based on the Van Vleck and Hebb theory. Factors determining the Verdet constants of these glasses are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363517
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104762
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  • 5
    Electronic Resource
    Electronic Resource
    Structure of the ZnSe/GaAs heteroepitaxial interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 449-451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103662
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1272-1274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102534
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  • 7
    Electronic Resource
    Electronic Resource
    Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1359-1361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10−8 A cm−2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100715
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  • 8
    Electronic Resource
    Electronic Resource
    Misfit dislocation nucleation in doped and undoped ZnSe/GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3197-3199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed that undoped ZnSe films grown on GaAs substrates by molecular beam epitaxy show an irregular array of interfacial 60° misfit dislocations. However, N and Cl doping of the ZnSe thin films changes the interfacial dislocation structure. p-type ZnSe with N concentrations of ∼1018/cm3 shows a regular array of interfacial 60° misfit dislocations and a lower (∼1×106/cm2) density of threading dislocations compared to undoped films. However, samples with doping levels higher than 1019/cm3 show a density of threading dislocations of ∼108/cm2. These differences are explained in terms of Frank partial dislocations observed only in doped ZnSe. The Frank partial dislocations act as nucleation sites for the misfit dislocations. Thus, different mechanisms for the formation of misfit dislocations in doped and undoped films occur in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110197
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  • 9
    Electronic Resource
    Electronic Resource
    Low-threshold buried-ridge II-VI laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densities as low as 630 A/cm2 and threshold voltages less than 9 V. Using a novel self-aligned process that results in a planar surface, buried-ridge laser diodes have also been fabricated. These devices have demonstrated room-temperature threshold currents as low as 2.5 mA, which is more than a factor of 50 lower than that of any previously reported II-VI laser diode. Room-temperature operation at duty factors up to 50% has been demonstrated. The far-field patterns from these devices indicate single lateral mode operation, suitable for diffraction-limited applications, such as optical data storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110511
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  • 10
    Electronic Resource
    Electronic Resource
    Blue-green laser diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1272-1274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first laser diodes fabricated from wide-band-gap II-VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105472
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